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SKP10N60A
SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation
combined with low conduction losses
C
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
G
E
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
PG-TO-247-3
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP10N60A
SKW10N60A
VCE IC VCE(sat) Tj Marking Package
600V 10A
2.3V
150C K10N60 PG-TO-220-3-1
600V 10A
2.3V
150C K10N60 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
TC = 25C
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Value
600
20
10.6
40
40
21
10
42
20
10
92
-55...+150
260
Unit
V
A
V
s
W
C
°C
Rev. 2.4 12.06.2013

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SKP10N60A
SKW10N60A
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol Conditions
RthJC
RthJCD
RthJA
PG-TO-220-3-1
PG-TO-247-3-21
Max. Value
1.35
2.4
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage V( B R ) C E S VG E = 0 V , I C = 5 0 0 A
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE = 15V, IC=10A
Tj=25C
Tj=150C
VGE=0V, IF=10A
Tj=25C
Tj=150C
IC=300A,VCE=VGE
VCE=600V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=10A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VCE=25V,
VGE=0V,
f=1MHz
Gate charge
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCC=480V, IC=10A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC10s
VCC 600V,
Tj 150C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
6.7
550
62
42
52
7
13
100
Unit
max.
-V
2.4
2.8
1.8
1.65
5
40
1500
100
-
A
nA
S
660 pF
75
51
68 nC
- nH
-
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.4 12.06.2013

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SKP10N60A
SKW10N60A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=25,
L1)=180nH,
C1)=55pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=200V, IF=10A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
178
24
0.15
0.17
0.320
34
15
214
29
0.173
0.221
0.394
ns
mJ
220 - ns
20 -
200 -
310 - nC
4.5 - A
180 - A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150C
VCC=400V,IC=10A,
VGE=0/15V,
RG=25
L1)=180nH,
C1)=55pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=200V, IF=10A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
198
26
0.260
0.280
0.540
34
15
238
32
0.299
0.364
0.663
ns
mJ
350 - ns
36 -
314 -
690 - nC
6.3 - A
200 - A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
3 Rev. 2.4 12.06.2013