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V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 2.5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2
Top View
Bottom View
V10D120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 5.0 A (TA = 125 °C)
TJ max.
Package
2 x 5.0 A
120 V
100 A
0.64 V
150 °C
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, inductrial, and
automotive application.
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V10D120C
120
10
5
100
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 27-Nov-14
1 Document Number: 89999
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current at rated VR per diode
IF = 2.5 A
IF = 5 A
IF = 2.5 A
IF = 5 A
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
TYP.
0.61
0.79
0.53
0.64
2.3
2.3
-
5
MAX.
-
0.94
-
0.72
-
-
500
15
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D120C
Typical thermal resistance
per diode
per device
per device
RJC
RJA (1)(2)
3.5
2.5
48
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2) Free air, without heatsink
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
TO-263AC (SMPD) V10D120C-M3/I
0.55
TO-263AC (SMPD) V10D120CHM3/I (1)
0.55
Note
(1) AEC-Q101 qualified
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
RthJC = 2.5 °C/W
10
8
6 RthJA = 48 °C/W
4
2
0
0 25 50 75 100 125 150
Case Temperature (°C) (D = duty cycle = 0.5)
Fig. 1 - Forward Current Derating Curve
4.4
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D = tp/T
tp
12345
Average Forward Current (A)
6
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 27-Nov-14
2 Document Number: 89999
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Device
50
Epoxy printed circuit
45 board FR4 copper
thickness = 70 μm
40
35
30
25
S (cm2)
20
123456789
Copper Pad Areas (cm2)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 27-Nov-14
3 Document Number: 89999
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000