INA6006AS1.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 INA6006AS1 데이타시트 다운로드

No Preview Available !

PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
<SMALL-SIGNAL TRANSISTOR>
INA6006AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA6006AS1 is a silicon PNP transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage VCEO = -150V
・Low voltage VCE(sat) = -0.5V(MAX)
・Complementary : INC6006AS1
APPLICATION
High voltage switching.
OUTLINE DRAWING
4.0
UNIT:mm
0.1
0.45
2.5 2.5
①②③
TERMINAL CONNECTOR
①:EMITTER
②:COLLECTOR
③:BASE
JEITA:-
JEDEC:-
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
I CM Peak collector current
I C Collector current
PC Collector dissipation(Ta=25℃)
Tj Junction temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃)
RATING
-160
-5
-150
-200
-100
600
+150
-55~+150
UNIT
V
V
V
mA
mA
mW
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage1
C to E saturation voltage2
B to E saturation voltage1
B to E saturation voltage2
B to E on voltage
Gain bandwidth product
Collector output capacitance
I C=-100μA,I E=0mA
I E=-10μA,I C=0mA
I C=-1mA,RBE=∞
VCB=-120V,I E =0mA
VEB=-3V,I C=0mA
VCE=-5V,I C=-1mA
VCE=-5V,I C=-10mA
VCE=-5V,I C=-50mA
I C=-10mA,I B=-1mA
I C=-50mA,I B=-5mA
I C=-10mA,I B=-1mA
I C=-50mA,I B=-5mA
VCE=-5V,I C=-10mA
VCE=-10V,I E=10mA
VCB=-10V,I E=0mA,f=1MHz
MARKING
Type Name
A06
□□W
LOT No
hFE ITEM
MIN
-160
-5
-150
-
-
45
90
45
-
-
-
-
-
100
-
LIMITS
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.8
MAX
-
-
-
-100
-100
-
270
-
-0.2
-0.5
-1.0
-1.0
-0.77
300
6
UNIT
V
V
V
nA
nA
-
-
-
V
V
V
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION

No Preview Available !

PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
TYPICIAL CHARACTERISTICS
<SMALL-SIGNAL TRANSISTOR>
INA6006AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
800
700
600
500
400
300
200
100
0
0
COLLECTOR DISSIPATION
VS AMBIENT TEMPERATURE
50 100 150
AMBIENT TEMPERATURE Ta (℃)
-100
-10
COMMON EMITTER TRANSFER
VCE=-5V
85℃
-1
25℃
-0.1
-40℃
DC forward current gain VS. Collector current
-1000
25℃
85℃
VCE=-5V
-100
-40℃
-10
-0.01
-0.1 -1 -10
Collector current IC(mA)
-100
COLLECTOR TO EMITTERSATURATION
VOLTAGE VS. COLLECTOR CURRENT
-1
IC/IB=10
-0.1
25℃
85℃
-40℃
-0.01
-0
-0.2 -0.4 -0.6 -0.8
-1
BASE TO EMITTER VOLTAGE VBE (V)
-0.01
-0.01
-0.1 -1 -10
COLLECTOR CURRENT IC(mA)
-100
BASE TO EMITTERSATURATION VOLTAGE
VS. COLLECTOR CURRENT
-10
IC/IB=10
-40℃
25℃
-1
-0.1
-0.01
85℃
-0.1 -1 -10
COLLECTOR CURRENT IC(mA)
-100
COMMON EMITTER OUTPUT
-70
Ta=25℃
-60
-50
-40
-30
-20
IB=300uA
IB=250uA
IB=200uA
IB=150uA
IB=100uA
-10
IB=50uA
-0
-0
IB=0
-5 -10 -15 -20
COLLECTOR EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION

No Preview Available !

PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
1000
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
Ta=25℃
VCE=-10V
100
10
1
0.1 1 10 100
EMITTER CURRENT IE (mA)
COLLECTOR INPUT CAPACITANCE
VS. BASE TO EMITTER VOLTAGE
100
Ta=25℃
f=1MHz
<SMALL-SIGNAL TRANSISTOR>
INA6006AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
f=1MHz
10
1
-0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE VCB (V)
10
1
-0.1 -1 -10
EMITTER TO BASE VOLTAGE VEB (V)
ISAHAYA ELECTRONICS CORPORATION

No Preview Available !

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is
prohibited.
·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Mar.2013