INC5003AH1.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 INC5003AH1 데이타시트 다운로드

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PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FEATURE
・Linearity of hFE is good
・Low voltage VCE(sat) = 250mV(MAX),Ic=2A
・Complementary INA5003AH1
<TRANSISTOR>
INC5003AH1
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
6.60
5.34
UNIT:mm
2.30
0.50
APPLICATION
Motor drive, IGBT drive, DC/DC convertor
1 23
2.286
0.76
JEITA:SC-63
JEDEC:TO-252
0.127max
0.50
TERMINAL CONNECTOR
(1)BASE
(2)COLLECTOR
(3)EMITTER
MAXIMUM RATING(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
I CP
PARAMETER
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃)
TEST CONDITIONS
-
-
-
DC
Pulse(PW=<300us, Duty cycle=<10%)
Ta=25℃
Tc=25℃
-
-
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
C to B break down voltage
C to E break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
VCE(sat) C to E saturation voltage
VBE(sat)
fT
Cob
ton
tstg
tf
B to E saturation voltage
Gain band width product
Collector output capacitance
Turn on time
Storage time
Fall time
Ic=100uA
Ic=10mA
IE=100uA
VCB=120V
VEB=6V
VCE=1V, Ic=2A
VCE=1V, Ic=5A
IC=2A, IB=100mA
IC=6A, IB=300mA
IC=6A, IB=300mA
VCE=10V, IE=-100mA
VCB=10V, IE=0A, f=1MHz
IC=3A, IB1=-IB2=0.15A
VCC=30V, RL=10Ω
VBB=7.5V
RATING
150
60
6
6
10
1
10
+150
-55~+150
UNIT
V
V
V
A
A
W
W
LIMITS
MIN TYP MAX
150 -
-
60 -
-
6- -
-- 1
-- 1
120 200 300
75 -
-
- 150 250
- 450 600
- - 1.3
- 120 -
- 50 -
- - 0.3
- - 1.5
- - 0.3
UNIT
V
V
V
μA
μA
-
-
mV
mV
V
MHz
pF
μs
μs
μs
ISAHAYA ELECTRONICS CORPORATION

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PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
TYPICAL CHARACTERISTICS
IC-VBE
10
VCE=2V
Ta=25
1 10mA
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE[V]
1000
HFE-IC
100
<TRANSISTOR>
INC5003AH1
SILICON NPN EPITAXIAL TYPE
IC-VCE
50mA
40mA
6
30mA
5
25mA
4
20mA
3
15mA
2
10mA
1
Ta=25
IB=5mA
0
012 345
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
VCE(sat)-IC
VBE(sat)-IC
10
IC/IB=20
Ta=I2C5/IB=20
VBE(sat)
1
10
VCE=2V
Ta=25
1
0.01
0.1 1
COLLECTOR CURRENT : IC[A]
10
1000
VCE=10V
Ta=25
100
fT-IE
10
0.1
VCE(sat)
0.01
0.01 0.1
1
COLLECTOR CURRENT : IC[A]
10
1000
100
Cob-VCB
IE=0A, f=1MHz
Ta=25
10
1
-0.001
-0.010
-0.100
EMITTER CURRENT:IE[A]
-1.000
1
0.1 1 10 100
COCLOLLELCECTOTRORTOTOBABSAESVEOVLOTLATGAEG:VEC: BIC[V[A] ]
ISAHAYA ELECTRONICS CORPORATION

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PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
ASO
10
DC
1
Pw=10ms
100ms
0.1
Tc=25
Single nonrepetitive pulse
0.01
0.1 1 10 100
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
<TRANSISTOR>
INC5003AH1
SILICON NPN EPITAXIAL TYPE
1000
100
Rth j-a
Ta=25
10
1
0.1
0.001 0.01
0.1 1 10
TIME : t[s]
100 1000
ISAHAYA ELECTRONICS CORPORATION

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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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