INC6005AC1.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 INC6005AC1 데이타시트 다운로드

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DESCRIPTION
INC6005AC1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE
・Super mini package for easy mounting
・High voltage VCEO=400V
APPLICATION
DC/DC convertor, High voltage switching
INC6005AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNIT:mm
②③
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
I C Collector current
PC Collector dissipation(Ta=25℃)
Tj Junction temperature
Tstg Storage temperature
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
400
7
400
100
200
+150
-55~+150
UNIT
V
V
V
mA
mW
MARKING
Type Name
C LA
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
FE
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
I C=50μA,I E=0mA
I E=50μA,I C=0mA
I C=1mA,R BE=∞
VCB=400V,I E =0mA
VEB=6V,I C=0mA
VCE=10V,I C=1mA
I C=10mA,I B=1mA
VCE=20V,I E=-10mA,f=100MHz
VCB=10V,I E=0mA,f=1MHz
LIMITS
MIN TYP MAX
400 -
-
7- -
400 -
-
-- 1
-- 1
82 - 280
- - 0.5
- 70 -
- 3.3 -
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION

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TYPICAL CHARACTERISTICS
1000
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
VCE=10V
Ta=100℃
100
Ta=-40℃
Ta=25℃
10
0.1
1 10
COLLECTOR CURRENT IC(mA)
100
1000
COLLECTOR TO EMITTER SATURATION
VOLTAGE VS. COLLECTOR CURRENT
IC/IB=10
Ta=25℃
100
Ta=100℃
Ta=-40℃
10
0.1
1 10 100
COLLECTOR CURRENT IC(mA)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
150
Ta=25℃
VCE=20V
100
50
INC6005AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
COMMON EMITTER TRANSFER
100
VCE=10V
80
60
Ta=-40℃
Ta=25℃
40 Ta=100℃
20
0
0 0.2 0.4 0.6 0.8 1
BASE TO EMITTER VOLTAGE VBE(V)
BASE TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
10
IC/IB=10
Ta=25℃
1
Ta=-40℃
Ta=100℃
0.1
0.1
1 10
COLLECTOR CURRENT IC(mA)
100
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
20
Ta=25℃
f=1MHz
IE=0
10
0
-1 -10 -100
EMITTER CURRENT IE(mA)
0
0.1 1 10 100
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION

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INC6005AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
250
200
150
100
50
0
0
COLLECTOR DISSIPATION
VS. AMBIENT TEMPERATURE
50 100 150
AMBIENT TEMPERATURE Ta (℃)
200
ISAHAYA ELECTRONICS CORPORATION

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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2013