INC6006AP1.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 INC6006AP1 데이타시트 다운로드

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DESCRIPTION
INC6006AP1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage VCEO = 160V
・Low voltage VCE(sat) = 0.2V(MAX)
・Complementary : INA6006AP1
APPLICATION
High voltage switching.
<SMALL-SIGNAL TRANSISTOR>
INC6006AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
UNIT:mm
1.5
E CB
0.53
MAX
1.5
3.0
0.48 MAX
0.4
マーキング
MARKING
TERMINAL CONNECTOR
E:EMI:TTERッタ
C:CCBO::LLEレーCTクスOR
B:BASE
JEITA:SC-62
EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
I CM Peak collector current
I C Collector current
PC Collector dissipation(Ta=25℃)
Tj Junction temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage1
C to E saturation voltage2
B to E saturation voltage1
B to E saturation voltage2
Gain bandwidth product
Collector output capacitance
Collector input capacitance
RATING
180
6
160
200
100
500
+150
-55~+150
UNIT
V
V
V
mA
mA
mW
TEST CONDITIONS
I C=100μA,I E=0A
I E=10μA,I C=0A
I C=1mA,RBE=∞
VCB=120V,I E =0A
VEB=4V,I C=0A
VCE=5V,I C=1mA
VCE=5V,I C=10mA
VCE=5V,I C=50mA
I C=10mA,I B=1mA
I C=50mA,I B=5mA
I C=10mA,I B=1mA
I C=50mA,I B=5mA
VCE=10V,I E=-10mA
VCB=10V,I E=0A,f=1MHz
VEB=0.5V,I c=0A,f=1MHz
MARKING
Type Name
BF
W
LOT №
hFE ITEM
LIMITS
MIN TYP MAX
180 -
-
6- -
160 -
-
- - 100
- - 100
72 -
-
72 - 330
27 -
-
- - 0.15
- - 0.2
- - 1.0
- - 1.0
100 - 300
- 1.7 6
- - 20
UNIT
V
V
V
nA
nA
-
-
-
V
V
V
V
MHz
pF
pF
ISAHAYA ELECTRONICS CORPORATION

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TYPICIAL CHARACTERISTICS
Collector dissipation-AMBIENT TEMPERATURE
1000
800
600
400
200
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (℃)
COMMON EMITTER TRANSFER
100
VCE=5V
10
85℃
1
25℃
0.1
-40℃
0.01
0
0.5 1 1.5
BASE TO EMITTER VOLTAGE VBE (V)
BASE TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRE
10
IC/IB=10
-40℃
25℃
1
85℃
0.1
0.01
0.1 1 10
COLLECTOR CURRENT IC(mA)
100
<SMALL-SIGNAL TRANSISTOR>
INC6006AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DC forward current gain VS. Collector current
1000
25℃
85℃
VCE=5V
100
-40℃
10
0.01
0.1 1 10
Collector current IC(mA)
100
COLLECTOR TO EMITTER SATURATION
VOLTAGE VS. COLLECTOR CURRENT
1
IC/IB=10
25℃
85℃
0.1
-40℃
0.01
0.01
0.1 1 10
COLLECTOR CURRENT IC(mA)
COMMON EMITTER OUTPUT
100
50
45 25℃
40
IB=300uA
35
IB=250uA
30
IB=200uA
25
20 IB=150uA
15
10
5
0
0
IB=100uA
IB=50uA
IB=0uA
5 10 15 20
COLLECTOR EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION

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1000
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
Ta=25℃
VCE=10V
100
10
1
0.1 1 10 100
EMITTER CURRENT IE (mA)
EMITTER INPUT CAPACITANCE
VS. BASE TO EMITTER VOLTAGE
100
Ta=25℃
f=1MHz
10
1
0.1 1 10
EMITTER TO BASE VOLTAGE VEB (V)
<SMALL-SIGNAL TRANSISTOR>
INC6006AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
10
Ta=25℃
f=1MHz
1
0.1 1 10 100
COLLECTOR TO BASE VOLTAGE VCB (V)
Ta=25℃
single pulse
1
ICMmax=0.2A
ICmax=0.1A
0.1
ASO
100msec
10msec
1msec
0.01
1sec
DC(0.5W)
0.001
0.01 0.1 1 10 100 1000
COLLECTOR TO EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION

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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2013