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Ordering number : EN6324B
2SA608N/2SC536N
Bipolar Transistor
(–)50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA
http://onsemi.com
Applicaitons
Capable of being used in the low frequency to high frequency range
Features
Large current capacity and wide ASO
Specications ( ) : 2SA608N
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(--50)60
(--)50
(--)6
(--)150
(--)400
500
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7542-001
4.5
3.7
0.45
0.5
1.27
Ordering & Package Information
Device
2SA608NF-NPA-AT
Package
NPA
SC-43A, TO-92, TO-226AA, SOT-54
Shipping
1,500
pcs./box
memo
3.5
2SA608NF-NPA-AT
2SA608NG-NPA-AT
2SA608NG-NPA-AT
NPA
SC-43A, TO-92, TO-226AA, SOT-54
1,500
pcs./box
Pb-Free
2SC536NF-NPA-AT
2SC536NG-NPA-AT
2SC536NF-NPA-AT
NPA
1,500
SC-43A, TO-92, TO-226AA, SOT-54 pcs./box
2SC536NG-NPA-AT
NPA
SC-43A, TO-92, TO-226AA, SOT-54
1,500
pcs./box
Marking
0.45
123
2.5 2.5
0.44
1 : Emitter
2 : Collector
3 : Base
NPA-WA
Semiconductor Components Industries, LLC, 2013
July, 2013
73113 TKIM TC-00003017/O2412 TKIM/42503 TSIM TA-100055, 100056/ No.6324-1/6
10700 TS (KOTO) TA-2543

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2SA608N/2SC536N
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)40V, IE=0A
VEB=(--)5V, IC=0A
VCE=(--)6V, IC=(--)1mA
VCE=(--)6V, IC=(--)0.1mA
VCE=(--)6V, IC=(--)10mA
VCB=(--)6V, f=1MHz
IC=(--)100mA, IB=(--)10mA
IC=(--)100mA, IB=(--)10mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
* : The 2SA608N / 2SC536N are classied by 1mA hFE as follow :
Rank
F
G
hFE
160 to 320
280 to 560
Ratings
min typ
160*
70
200
(4.5)3.0
(--)60
(--)50
(--)6
max
(--)0.1
(--)0.1
560*
(--)0.3
(--)1.0
Unit
μA
μA
MHz
pF
V
V
V
V
V
--16
--12
--8
--4
0
0
--240
--200
IC -- VCE
--50--μ45A--μ4A0μ--A35μA
--30μA
--25μA
2SA608N
--20μA
--15μA
--10μA
--5μA
IB=0μA
--10 --20 --30 --40 --50
Collector to Emitter Voltage, VCE -- V IT00496
IC -- VBE
2SA608N
VCE= --6V
--160
--120
--80
--40
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base to Emitter Voltage, VBE -- V IT00498
IC -- VCE
20
50μA
2SC536N
45μA
16
40μA
35μA
12 30μA
25μA
8 20μA
15μA
4 10μA
5μA IB=0μA
0
0 10 20 30 40
50
Collector to Emitter Voltage, VCE -- V IT00497
IC -- VBE
240
2SC536N
VCE=6V
200
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage, VBE -- V IT00499
No.6324-2/6

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2SA608N/2SC536N
1000 hFE -- IC
2SA608N
7 VCE= --6V
5
3 Ta=75°C
2
--25°C
100 25°C
7
5
3
2
10
--0.1 2 3
1000
7
5
5 7--1.0 2 3 5 7 --10 2 3 5 7--100 2 3 5 7--1000
Collector Current, IC -- mA
IT00500
fT -- IC
2SA608N
VCE= --6V
3
2
1000 hFE -- IC
2SC536N
7 VCE=6V
5
3
Ta=75°C
2
100
--25°C
25°C
7
5
3
2
10
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT00501
fT -- IC
1000
2SC536N
7 VCE=6V
5
3
2
100
7
5
3
2
10
--1.0 2 3
100
7
5
3
2
5 7 --10 2 3 5 7 --100 2
Collector Current, IC -- mA
Cob -- VCB
3 5 7--1000
IT00502
2SA608N
f=1MHz
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.1
--1.0
7
5
2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector to Base Voltage, VCB -- V
VCE(sat) -- IC
5 7 --100
IT00504
2SA608N
IC / IB= --10
3
2
100
7
5
3
2
10
1.0
100
7
5
3
2
23
5 7 10 2 3 5 7 100 2
Collector Current, IC -- mA
Cob -- VCB
3 5 7 1000
IT00503
2SC536N
f=1MHz
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
1.0
7
5
2 3 5 7 1.0 2 3 5 7 10 2 3
Collector to Base Voltage, VCB -- V
VCE(sat) -- IC
5 7 100
IT00505
2SC536N
IC / IB=10
3
2
--0.1
7
5
3
2
--0.01
--1.0
23
5 7 --10 2 3 5 7 --100 2 3
Collector Current, IC -- mA
5 7--1000
IT00506
0.1
7
5
3
2
0.01
1.0
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA
IT00507
No.6324-3/6

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2SA608N/2SC536N
1000
7
5 ICP=400mA
3
2 IC=150mA
100
7
5
3
2
ASO
2SA608N / 2SC536N
For PNP, minus sign is omitted.
DC
100m1s0ms
operation
10
7
5
3
2
5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector to Emitter Voltage, VCE -- V IT00511
PC -- Ta
600
2SA608N / 2SC536N
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00510
No.6324-4/6

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2SA608N/2SC536N
Outline Drawing
2SA608NF-NPA-AT, 2SA608NG-NPA-AT, 2SC536NF-NPA-AT, 2SC536NG-NPA-AT
Mass (g) Unit
0.19
* For reference
mm
No.6324-5/6