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2SK2882
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOSV)
2SK2882
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 0.08 (typ.)
High forward transfer admittance: |Yfs| = 17 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 150 V)
Enhancement mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
150
150
±20
18
54
45
176
18
4.5
150
55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 0.8 mH, RG = 25 Ω, IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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Electrical Characteristics (Ta = 25°C)
2SK2882
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 150 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 9 A
VGS = 10 V, ID = 9 A
VDS = 10 V, ID = 9 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ ±10
⎯ ⎯ 100
150
0.8 2.0
0.09 0.18
0.08 0.12
10 17
1380
200
610
μA
μA
V
V
Ω
S
pF
pF
pF
tr
10 V
VGS
ton 0 V
tf
12
ID = 9 A VOUT
24
ns
VDD ∼− 100 V
56
toff Duty <= 1%, tw = 10 μs
130
Qg
Qgs VDD ∼− 120 V, VGS = 10 V, ID = 18 A
Qgd
57 nC
43 nC
14 nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 18 A, VGS = 0 V
IDR = 18 A, VGS = 0 V
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 18 A
⎯ ⎯ 54 A
⎯ ⎯ −1.7 V
185
ns
1.3 ⎯ μC
Marking
K2882
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
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ID – VDS
20
84
Common source
3.8
6
Tc = 25°C
Pulse test
16 10
3.5
12
3.2
8
VGS = 3 V
4
0
012345
Drain-source voltage VDS (V)
ID – VGS
30
Common source
VDS = 10 V
Pulse test
20
Tc = −55°C
10
100
25
0
012345
Gate-source voltage VGS (V)
2SK2882
ID – VDS
50
Common source
Tc = 25°C
10
65
Pulse test
40
8
4.5
30 4
20
3.5
10 3
VGS = 2.5 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
VDS – VGS
4
Common source
Tc = 25°C
Pulse test
3
2
ID = 18 A
1
9
3
0
0 2 4 6 8 10 12
Gate-source voltage VGS (V)
50
Common source
30 VDS = 10 V
Pulse test
Yfs– ID
Tc = −55°C
100
10
25
5
3
1
1
35
10
30 50
100
Drain current ID (A)
1000
500
300
RDS (ON) – ID
Common source
Tc = 25°C
Pulse test
100 4
50 VGS = 10 V
30
10
0.1
0.3 0.5 1
3 5 10
Drain current ID (A)
30 50
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RDS (ON) – Tc
200
Common source
Pulse test
160
ID = 18 A
120
4.5
80
9
40
0
80 40
0
40 80 120 160
Case temperature Tc (°C)
2SK2882
IDR – VDS
100
Common source
50 Tc = 25°C
Pulse test
30
10
10
5
3 35
1 VGS = 0, 1 V
1
0
0.4
0.8
1.2
1.6
Drain-source voltage VDS (V)
5000
3000
1000
500
300
Capacitance – VDS
Ciss
Coss
100
50
Common source
30 VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
0.3 0.5 1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
Vth – Tc
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
3
2
1
0
80 40 0 40 80 120 160
Case temperature Tc (°C)
PD – Tc
60
40
20
0
0 40 80 120 160
Case temperature Tc (°C)
Dynamic Input/Output Characteristics
160 40
Common source
ID = 18 A
Tc = 25°C
Pulse test
120 30
VDS
80
40
30
60
VDD = 120 V
20
10
VGS
00
0 20 40 60
Total gate charge Qg (nC)
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2SK2882
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.05
0.03
0.1
0.05
0.02
0.01
0.01
Single pulse
0.005
0.003
10 μ
100 μ
rth – tw
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
1m
10 m
100 m
Pulse width tw (s)
1
10
Safe Operating Area
100
ID max (pulsed)*
50
30
ID max (continuous)*
100 μs*
1 ms*
10
5
3 DC operation
Tc = 25°C
1
0.5 *: Single nonrepetitive
0.3 pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1 3 10
VDSS max
30 100
Drain-source voltage VDS (V)
300
EAS – Tch
200
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
15 V
Test circuit
RG = 25 Ω
VDD = 50 V, L = 0.8 mH
BVDSS
IAR
VDD
VDS
Wave form
ΕAS
=
1·L·I2·
2
⎝⎛⎜⎜
BVDSS
BVDSS VDD
⎟⎟⎠⎞
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