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INJ0203AC1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0203AC1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
0.65
2.8
1.5
0.65
FEATURE
・Input impedance is high, and not necessary to
consider a drive electric current.
・Drive voltage -2.5V
・Low on Resistance. RDS(on)=100mΩ(TYP).
・High speed switching.
・Small package for easy mounting.
②③
Unit:mm
APPLICATION
Switching
MAXIMUM RATINGS(Ta=25℃)
Symbol
VDSS
VGSS
ID
IDP
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current(DC)
Drain current(Pulse) ※1
Total Power Dissipation
Rating
-20
-10
-2
-4
200
Unit
V
V
A
A
mW
Tch Channel Temperature
Tstg Storage Temperature
+150
-55~+150 ℃
※1:Pw≦10μs, Duty cycle≦1%
JEITA:SC-59
JEDEC:Similar to TO-236
TERMINAL CONNECTER
①:GATE
②:SOURCE
③:DRAIN
EQUIVALENT CIRCUIT
D
G
MARKING
J・8
S
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Leak current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
RDS(ON)
Ciss
Coss
ton
toff
Test Condition
ID=-100μA, VGS=0V
VGS=±10V, IDS=0A
VDS=-20V ,VGS=0V
ID=-250μA, VDS=V GS
VDS=-10V, ID=-1A
ID=-1A, VGS=-4.5V
VDS=-10V, VGS=0V, f=1MHz
VDD=-15V, ID=-1A
VGS=0~-10V
MIN
Limit
TYP
MAX
Unit
-20 -
-
V
- - ±10 μA
- - -10 μA
-0.4 - -1.2 V
- 3.0 -
S
- 100 - mΩ
- 340 -
pF
- 90 - pF
- 30 -
- 130 -
ns
ns
ISAHAYA ELECTRONICS CORPORATION

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INJ0203AC1
High Speed Switching
Silicon P-channel MOSFET
TYPICAL CHARACTERISTICS
-10
VDS=-10V
-1
ID-VGS
-10
VGS=0V
-1
IDR-VDS
-0.1
-0.01
Ta=100℃
75℃
25℃
-25℃
-0.1
-0.01
Ta=100℃
75℃
25℃
-25℃
-0.001
0
-0.5 -1 -1.5 -2 -2.5
Gate-Source voltage VGS(V)
-0.001
-3 0
0.5 1 1.5
Drain-Source voltage VDS(V)
10
VDS=-10V
|Yfs|-ID
1
VGS=-4.5V
RDS(on)-ID
2
Ta=100℃
75℃
1 25℃
-25℃
0.1
0
-0.5 -1 -1.5 -2 -2.5 -3
Drain current ID(A)
RDS(on)-VGS
10
ID=-1A
1 Ta=100℃
75℃
25℃
-25℃
0.1
0.1
0.01
0
Ta=100℃
75℃
25℃
-25℃
-0.5 -1 -1.5 -2 -2.5 -3
Drain current ID(A)
-1.5
ID=250uA
VDS=VGS
Vth-Ta
-1
-0.5
0.01
0
-2 -4 -6 -8
Gate-Source voltage VGS(V)
-10
0
-50
-25 0 25 50 75 100
Ambinet temperature Ta(℃)
125
ISAHAYA ELECTRONICS CORPORATION

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INJ0203AC1
High Speed Switching
Silicon P-channel MOSFET
TYPICAL CHARACTERISTICS
1000
C-VDS
Ciss
1000
toff
tf
100
100
Coss
Ta=25℃
VGS=0V
10
-0.1
-1
-10
Drain-Source voltage VDS (V)
-100
ASO
Ta=25℃
Single Pulse
-10
1msec
-1
-0.1
-0.01
-0.001
-0.01
RDS(on) Limited
@VGS=-8.0V
DC[PD=200mW]
package mounted
on glass-epoxy
substrate.
(9*19*1mm)
[PD=400mW]
10msec
100msec
1sec
-0.1 -1 -10
Drain-Source voltage VDS (V)
-100
ton
10
tr
1
-0.01
Switching time test circuit
0 IN
-10V
50Ω
10μs
VDD=-15V
Duty1%
Input:tr,tf<10ns
Common source
Ta=25
OUT
0V
Input
RL Waveform
VDD -10V
VDS(ON
Output
Waveform
VDD
t-ID
Ta=25℃
VDD=-15V
VGS=-10V
RG=50Ω,PW=10us
-0.1 -1
Drain current ID (A)
-10
10%
90%
90%
10%
tr tf
ton toff
ISAHAYA ELECTRONICS CORPORATION

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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Mar.2013