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INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
4.4
1.6
UNIT:mm
1.5
FEATURE
SDG
MARKING
・Input impedance is high, and not necessary to
consider a drive electric current.
・High drain current ID=-2.5A
・Vth is low, and drive by low voltage is possible. Vth=1.0~2.5V
・Low on Resistance. RDS(on)=95mΩ(TYP).
・High speed switching.
APPLICATION
0.5
1.5
3.0
0.4
0.4
TERMINAL CONNECTOR
S:SOURCE
D:DRAIN
G:GATE
JEITA:SC-62
JEDEC:SOT-89
Switching
MAXIMUM RATING (Ta=25℃)
Symbol
Parameter
Rating
UNIT
VDSS Drain-Source Voltage
-30 V
VGSS
ID(DC)
Gate-Source Voltage
Drain Current (DC)
±20
-2.5
V
A
IDP Drain Current(Pulse) ※1
-5 A
PD Total Power Dissipation
750(※2)
mW
Tch Channel Temperature
150 ℃
Tstg Storage Temperature
-55~+150
※1:PW≦10µs, Duty cycle≦1%
※2:package mounted on 9mm×19mm×1mm glass-epoxy substrate
EQUIVALENT
D
G
S
MARKING
Type Name
JJ
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Parameter
Symbol
Test Condition
Drain-Source Breakdown Voltage
Gate-Source Leak Current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
V(BR)DSS
IGSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Coss
ton
toff
ID=-100µA,VGS=0V
VGS=±20V,ID=0A
VDS=-30V,VGS=0V
ID=-250µA,VDS=VGS
VDS=-10V,ID=-1.2A
ID=-0.5A,VGS=-4.5V
ID=-0.5A,VGS=-10V
VDS=-10V,VGS=0V,f=1MHz
VDD=-10V,ID=-2.5A,VGS=-0~-5V
Limit
Unit
MIN TYP MAX
-30 -
-V
-
-
±10
µA
- - -1 µA
-1 - -2.5 V
- 3.0 - S
- 120 -
mΩ
- 95 -
- 500 -
pF
- 100 -
- 35 -
ns
- 50 -
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-1.0
-10V
ID - VDS
Ta = 25℃
-4.5V
-0.5
-3.0V
-2.8V
0
0
VGS = -2.5V
-0.5
Drain-source voltage VDS (V)
-1
ID - VGS
-10
Ta = 25℃
VDS = -10V
-1
-0.1
-0.01
0
-1 -2 -3 -4
Gate-source voltage VGS (V)
-5
RDS(ON) - ID
1
Ta = 25℃
VGS = -4.5V
0.1
INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
IDR - VSD
-10
Ta = 25℃
VGS = 0V
-1
-0.1
-0.01
0
-0.2 -0.4 -0.6 -0.8 -1.0
Source-drain voltage VSD (V)
-1.2
RDS(ON) - VGS
0.5
Ta = 25℃
ID = -0.5A
0.4
0.3
0.2
0.1
0
0
-2 -4 -6 -8
Gate-source voltage VGS (V)
-10
|Yfs| - ID
10
Ta = 25℃
VDS = -10V
1.0
0.01
-0.01
-0.1
Drain current ID (A)
-1
0.1
-0.01
-0.1 -1
Drain current ID (A)
-10
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ASO
-10
PW=100us
1ms
-1
DC (750mW)
10ms
-0.1
-0.01
Ta = 25℃
single pulse
glass-epoxy substrate
(19㎜×9㎜×1㎜)
-0.1 -1 -10
Drain-source voltage VDS (V)
-100
1000
100
10
tf
td(off)
td(on)
tr
t - ID
Ta = 25℃
1
-0.01
-0.1
Drain current ID (A)
-1
Test circuit
IN
50Ω
OUT
RL 0V
VDD IN
-5V
10us
Duty 1%
VDD = 30V
Common source
Ta = 25
INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
PD - Ta
900
single pulse
750 glass-epoxy substrate
(19㎜×9㎜×1㎜)
600
450
300
150
0
0
25 50 75 100 125 150 200
Ambient temperature Ta ()
C - VDS
1000
Ciss
100
Coss
Crss
10
Ta = 25℃
VGS = 0V
f = 1MHz
1
-0.1 -1 -10
Drain-source voltage VDS (V)
-100
0V
・Input
Waveform
-5V
10%
90%
VDS(on)
・Output
Waveform
VDD td(on)
ton
90%
10%
td(off)
tr
toff
tf
ISAHAYA ELECTRONICS CORPORATION

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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jul.2014