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Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
0.5W Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range 2.4 to 56 volts
- DO-35 package
- Through-hole device type mounting
- Hemetically sealed glass
- Compression bonded construction
- All extermal surfaces are corrosion
resistant and leads are readily solderable
- ROHS complaint
- Solder hot dip Tin(Sn) lead finish
- Cathode indicated by polarity band
- Packing code with suffix "G" means
Halogen-free
DO-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
Forward Voltage @IF=200mA
PD 500
VF 1.1
Operating and Storage Temperature Range
TJ , TSTG
100
UNITS
mW
V
°C
Document Number: DS_S1410003
Version: E14

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Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
1N52xxB
(Note 1)
PART NO.
SUFFIX (Note 2)
-xx
PACKING
CODE
R0
A0
PACKING CODE
SUFFIX
G
Note 1: "xx" defines voltage from 2.4V (1N5221B) to 56V (1N5263B)
Note 2: Part No. Suffix „-xx “ would be used for special requirement
PACKAGE
DO-35
PACKING
10K / 14" Reel
5K / Box (Ammo)
EXAMPLE
PREFERRED
PART NO.
1N5221B R0G
PART NO.
1N5221B
PART NO.
SUFFIX
1N5221B-L0 R0G 1N5221B
L0
1N5221B-B0 R0G 1N5221B
B0
PACKING CODE
R0
R0
R0
PACKING CODE
SUFFIX
G
G
G
DESCRIPTION
Multiple manufacture
source
Halogen free
Define manufacture
source
Halogen free
Define manufacture
source
Halogen free
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
500
400
300
200
100
0
0 5 10 15 20
I - Lead Length (mm)
Fig. 1 Thermal Resistance VS. Lead Length
1.3
1.2 VZtn = VZt/VZ (25 °C)
TKVZ = 10 x 10-
1.1
1.0
0.9
8 x 10-4/K
6 x 10-
4 x 10-
2 x 10-
4/K
0
- 2 x 10-
- 4 x 10-
0.8
-60 0
60 120 180 240
Fig. 3 Typical ChangeTjo-fJuWncotriokninTgeVmopltearagteurVeS(°.CJ)unction
1000
100
Tj = 25oC
10
IZ = 5 mA
1
0 5 10 15 20 25
Fig.
2
Typical
Change
oVfZ
- Z-Voltage (V)
Working Voltage
under
Operating
Conditions at Tamb = 25 oC
Document Number: DS_S1410003
600
500
400
300
200
100
0
0 40 80 120 160 200
Tamb - Ambient Temperature (°C)
Fig.4 Total Power Dissipation VS. Ambient Temperature
Version: E14

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Small Signal Product
15
10
5
IZ = 5 mA
0
-5
0
10 20 30 40 50
VZ - Z-Voltage (V)
Fig. 5 Temperature Coefficient of Vz VS. Z-Voltage
200
150 VR = 2 V
Tj = 25oC
100
50
0
0 5 10 15 20 25
VZ - Z-Voltage (V)
Fig.6 Diode Capacitance VS. Z-Voltage
100
10
1 Tj = 25oC
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VF - Forward Voltage (V)
Figure 7. Forward Current VS. Forward Voltage
Document Number: DS_S1410003
1N5221B - 1N5263B
Taiwan Semiconductor
100
80
60
40
20
0
0
Ptot = 500 mW
Tamb = 25 oC
2468
VZ - Z-Voltage (V)
Fig.8 Z-Current VS. Z-Voltage
10
50
40
30
20
10
0
15
Ptot = 500 mW
Tamb = 25 °C
20 25 30
Fig. 9 Z-CVZu-rrZe-nVtoVltaSg.eZ(-VV)oltage
35
1000
IZ = 1 mA
100
5 mA
10
10 mA
1
Tj = 25oC
0 5 10 15 20 25
VZ - Z-Voltage (V)
Fig.10 Differential Z-Resistance VS. Z-Voltage
Version: E14

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Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
1000
tp/T = 0.5
100 tp/T = 0.2
tp/T = 0.01
10
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
Single Pulse
R thJA = 300 K/W
T = T jmax –Tamb
1
0.1
iZM = (–VZ +(VZ2+ 4rzj x T/Zthp) 1 / 2) /(2rzj )
1.0
10.0
100.0
1000.0
tp – Pulse Length (ms)
Fig. 11 Thermal Response
Document Number: DS_S1410003
Version: E14

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Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
Electrical Characteristics (Ratings at TA=25oC ambient temperature unless otherwise specified)
Device
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
Vz @ Izt
Voltage
Nominal
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
Current
IZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
ZZT @ IZT
Max.
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
ZZK
@IZK=0.25mA
Max.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
IR @ VR
μA
Max.
100
100
75
75
50.0
25.0
15.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VR
(Volts)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8
8.4
9
10
10
11
12
13
14
14
15
17
18
18
21
21
23
Document Number: DS_S1410003
Version: E14