1N5246B.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 1N5246B 데이타시트 다운로드

No Preview Available !

1N5221B - 1N5263B
Taiwan Semiconductor
500mW, 5% Tolerance Zener Diodes
FEATURES
● Wide Zener voltage range selection: 2.4V to 56V
● VZ tolerance selection of ± 5%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: DO-35
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ
PD
VF at IF=200mA
TJ Max.
Package
2.4-56
V
500 mW
1.1 V
200 °C
DO-35
Configuration
Single die
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Power dissipation
PD
Forward voltage
IF=200mA
VF
Junction temperature range
TJ
Storage temperature range
TSTG
VALUE
500
1.1
200
200
UNIT
mW
V
°C
°C
1 Version:G1804

No Preview Available !

1N5221B - 1N5263B
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
ZENER VOLTAGE
TEST
CURRENT
TEST
REGULAR IMPEDANCE
CURRENT
PART NUMBER
VZ @ IZT
V
IZT
ZZT @ IZT
ZZK @ IZK
IZK
mA Ω Ω mA
1N5221B
Nominal
2.4
Max.
Max.
20
30
1200
0.25
1N5222B
2.5
20
30
1250
0.25
1N5223B
2.7
20
30
1300
0.25
1N5224B
2.8
20
30
1400
0.25
1N5225B
3.0
20
29
1600
0.25
1N5226B
3.3
20
28
1600
0.25
1N5227B
3.6
20
24
1700
0.25
1N5228B
3.9
20
23
1900
0.25
1N5229B
4.3
20
22
2000
0.25
1N5230B
4.7
20
19
1900
0.25
1N5231B
5.1
20
17
1600
0.25
1N5232B
5.6
20
11
1600
0.25
1N5233B
6.0
20
7
1600
0.25
1N5234B
6.2
20
7
1000
0.25
1N5235B
6.8 20 5 750 0.25
1N5236B
7.5 20 6 500 0.25
1N5237B
8.2 20 8 500 0.25
1N5238B
8.7 20 8 600 0.25
1N5239B
9.1 20 10 600 0.25
1N5240B
10 20 17 600 0.25
1N5241B
11 20 22 600 0.25
1N5242B
12 20 30 600 0.25
1N5243B
13 9.5 13 600 0.25
1N5244B
14 9.0 15 600 0.25
1N5245B
15 8.5 16 600 0.25
1N5246B
16 7.8 17 600 0.25
1N5247B
17 7.4 19 600 0.25
1N5248B
18 7.0 21 600 0.25
1N5249B
19 6.6 23 600 0.25
1N5250B
20 6.2 25 600 0.25
1N5251B
22 5.6 29 600 0.25
1N5252B
24 5.2 33 600 0.25
1N5253B
25 5.0 35 600 0.25
1N5254B
27 4.6 41 600 0.25
1N5255B
28 4.5 44 600 0.25
1N5256B
30 4.2 49 600 0.25
1N5257B
33 3.8 58 700 0.25
1N5258B
36 3.4 70 700 0.25
LEAKAGE
CURRENT
IR @ VR
µA V
Max.
100
1.0
100 1.0
75 1.0
75 1.0
50.0 1.0
25.0 1.0
15.0 1.0
10.0 1.0
5.0 1.0
5.0 2.0
5.0 2.0
5.0 3.0
5.0 3.5
5.0 4.0
3.0 5.0
3.0 6.0
3.0 6.5
3.0 6.5
3.0 7.0
2.0 8
1.0 8.4
0.5 9
0.1 10
0.1 10
0.1 11
0.1 12
0.1 13
0.1 14
0.1 14
0.1 15
0.1 17
0.1 18
0.1 18
0.1 21
0.1 21
0.1 23
0.1 25
0.1 27
2 Version:G1804

No Preview Available !

1N5221B - 1N5263B
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
ZENER VOLTAGE
TEST
CURRENT
TEST
REGULAR IMPEDANCE
CURRENT
LEAKAGE
CURRENT
PART NUMBER
VZ @ IZT
V
IZT
ZZT @ IZT
ZZK @ IZK
IZK
IR @ VR
mA Ω Ω mA µA V
Nominal
Max.
Max.
Max.
1N5259B
39 3.2 80 800 0.25 0.1 30
1N5260B
43 3.0 93 900 0.25 0.1 33
1N5261B
47
2.7
105
1000
0.25 0.1 36
1N5262B
51
2.5
125
1100
0.25 0.1 39
1N5263B
56
2.2
150
1300
0.25 0.1 43
Notes:
1. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on
price, availability and delivery.
2. The zener voltage(VZ) is tested under pulse condition. The measured VZ is guaranteed to be within
specification with device junction in thermal equilibrium.
3. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having
an RMS value equal to 10% of the DC zener current (IZT) is superimposed to IZT.
4. Zener voltage has a standard tolerance on the nominal zener voltage of ±5%.
ORDERING INFORMATION
PART NO.
(Note 1)
PACKAGE
1N52xxB R0
DO-35
PACKING
10K / 14" Reel
1N52xxB R0G
DO-35
10K / 14" Reel
1N52xxB A0
DO-35
5K / Box (Ammo)
1N52xxB A0G
DO-35
5K / Box (Ammo)
Note:
1. "xx" defines part no. from 1N5221B to 1N5263B
3 Version:G1804

No Preview Available !

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Power dissipation VS. Ambient temperature
600
500
400
300
200
100
0
0
40 80 120 160
Tamb - Ambient Temperature (°C)
200
1N5221B - 1N5263B
Taiwan Semiconductor
4 Version:G1804

No Preview Available !

PACKAGE OUTLINE DIMENSION
DO-35
MARKING DIAGRAM
MARKING DIAGRAM
1N
52
XX
B
1N5221B - 1N5263B
Taiwan Semiconductor
DIM.
A
B
C
D
Unit (mm)
Min Max
0.34 0.60
2.90 5.08
25.40
38.10
1.30 2.28
Unit (inch)
Min Max
0.013
0.024
0.114
0.200
1.000
1.500
0.051
0.090
5 Version:G1804