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1KSMB SERIES
Taiwan Semiconductor
CREAT BY ART
1000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified
DO-214AA (SMB)
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.11 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak power dissipation at TA=25°C, tp=1ms (Note 1)
Steady state power dissipation
PPK
PD
1000
5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
VF
3.5 / 5.0
Typical thermal resistance
RθJL
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2
Note 2: VF=3.5V for Devices of VBR50V and VF=5.0V Max. for Devices VBR>50V
20
100
- 55 to +175
- 55 to +175
Devices for Bipolar Applications
1. For Bidirectional use CA suffix
ORDER INFORMATION (EXAMPLE)
1KSMB39A R5G
Green compound code
Packing code
Part no.
UNIT
Watts
Watts
A
Volts
oC/W
°C
°C
Document Number: DS_D1408012
Version: E15

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CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
1
1 10 100 1000
tp, PULSE WIDTH, (μs)
140
120
100
80
60
40
20
0
0
FIG. 3 CLAMPING POWER PULSE WAVEFORM
tr=10μs
Peak Value
IPPM
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
td
0.5 1 1.5 2 2.5 3 3.5 4
t, TIME ms
10000
1000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
VR=0
100
f=1.0MHz
Vsig=50mVp-p
MEASURED at
STAND-OFF
VOLTAGE,Vwm
10
1
10
V(BR), BREAKDOWN VOLTAGE (V)
100
1KSMB SERIES
Taiwan Semiconductor
FIG.2 PULSE DERATING CURVE
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (oC)
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
100
8.3ms Single Half Sine Wave
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
Document Number: DS_D1408012
Version: E15

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CREAT BY ART
Device
1KSMB10A
1KSMB10CA
1KSMB11A
1KSMB11CA
1KSMB12A
1KSMB12CA
1KSMB13A
1KSMB13CA
1KSMB15A
1KSMB15CA
1KSMB16A
1KSMB16CA
1KSMB18A
1KSMB18CA
1KSMB20A
1KSMB20CA
1KSMB22A
1KSMB22CA
1KSMB24A
1KSMB24CA
1KSMB27A
1KSMB27CA
1KSMB30A
1KSMB30CA
1KSMB33A
1KSMB33CA
1KSMB36A
1KSMB36CA
1KSMB39A
1KSMB39CA
1KSMB43A
1KSMB43CA
1KSMB47A
1KSMB47CA
1KSMB51A
1KSMB51CA
1KSMB56A
1KSMB56CA
1KSMB62A
1KSMB62CA
1KSMB68A
1KSMB68CA
1KSMB75A
1KSMB75CA
1KSMB82A
1KSMB82CA
Device
Marking
Code
A10E
N10E
A10F
N10F
A10G
N10G
A10H
N10H
A10I
N10I
A10J
N10J
A10K
N10K
A10L
N10L
A10M
N10M
A10N
N10N
A10O
N10O
A10P
N10P
A10Q
N10Q
A10R
N10R
A10S
N10S
A10T
N10T
A10U
N10U
A10V
N10V
A10W
N10W
A10X
N10X
A10Y
N10Y
A10Z
N10Z
B10A
O10A
Breakdown Voltage
VBR (V)
(Note 1)
Min Max
9.5 10.5
10.5 11.6
11.4 12.6
12.4 13.7
14.3 15.8
15.2 16.8
17.1 18.9
19.0 21.0
20.9 23.1
22.8 25.2
25.7 28.4
28.5 31.5
31.4 34.7
34.2 37.8
37.1 41.0
40.9 45.2
44.7 49.4
48.5 53.6
53.2 58.8
58.9 65.1
64.6 71.4
71.3 78.8
77.9 86.1
1KSMB SERIES
Taiwan Semiconductor
Test
Current
IT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
VWM
(V)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Clamping Voltage
@ VWM
ID (μA)
Current IPPM
(A) (Note 2)
@ IPPM
VC(V)
8.55 10.0 69.0 14.5
9.40
5.0
64.1 15.6
10.2
5.0
59.9 16.7
11.1
5.0
54.9 18.2
12.8
5.0
47.2 21.2
13.6
1.0
44.4 22.5
15.3
1.0
39.2 25.5
17.1
1.0
36.1 27.7
18.8
1.0
32.7 30.6
20.5
1.0
30.1 33.2
23.1
1.0
26.7 37.5
25.6
1.0
24.2 41.4
28.2
1.0
21.9 45.7
30.8
1.0
20.0 49.9
33.3
1.0
18.6 53.9
36.8
1.0
16.9 59.3
40.2
1.0
15.4 64.8
43.6
1.0
14.3 70.1
47.8
1.0
13.0 77.0
53.0
1.0
11.8 85.0
58.1
1.0
10.9 92.0
64.1
1.0
9.7 103
70.1
1.0
8.8 113
Document Number: DS_D1408012
Version: E15

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CREAT BY ART
1KSMB SERIES
Taiwan Semiconductor
Device
Device
Marking
Code
1KSMB91A
1KSMB91CA
1KSMB100A
1KSMB100CA
B10B
O10B
B10C
O10C
Breakdown Voltage
VBR (V)
(Note 1)
Min Max
86.5 95.5
95 105
Test
Current
IT
(mA)
1.0
1.0
Stand-Off
Voltage
VWM
(V)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Clamping Voltage
@ VWM
ID (μA)
Current IPPM
(A) (Note 2)
@ IPPM
VC(V)
77.8
1.0
8.0 125
85.5
1.0
7.3 137
Notes:
1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent.
2. All terms and symbols are consistent with ANSI/IEEE C62.35.
3. For Bidirectional use CA suffix
Document Number: DS_D1408012
Version: E15

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1KSMB SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min Max
1.95 2.10
4.25 4.75
3.48 3.73
1.99 2.61
0.90 1.41
5.10 5.30
0.10 0.20
0.15 0.31
Unit (inch)
Min Max
0.077 0.083
0.167 0.187
0.137 0.147
0.078 0.103
0.035 0.056
0.201 0.209
0.004 0.008
0.006 0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
MARKING DIAGRAM
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
Document Number: DS_D1408012
Version: E15