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Ordering number:EN5988
P-Channel MOS Silicon FET
CPH3303
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Package Dimensions
unit:mm
2152
2.9
0.4
[CPH3303]
0.15
3
0 to 0.1
12
1.9
1 : Gate
2 : Source
3 : Drain
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2×0.8mm)
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : JC
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=–1mA, VGS=0
VDS=–20V, VGS=0
VGS=±8V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–0.8A
ID=–0.8A, VGS=–4V
ID=–0.2A, VGS=–2.5V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
SANYO : CPH3
Ratings
–20
±10
–1.6
–6.4
1.0
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
–20 V
–10 µA
±10 µA
–0.4 –1.4 V
1.6 2.4
S
245 315 m
340 480 m
180 pF
90 pF
43 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40599TS (KOTO) TA-1498 No.5988-1/4

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Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
CPH3303
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–1.6A
VDS=–10V, VGS=–10V, ID=–1.6A
VDS=–10V, VGS=–10V, ID=–1.6A
IS=–1.6A, VGS=0
Switching Time Test Circuit
VIN
0V
–4V
VIN
PW=10µs
D.C.1%
VDD=–10V
ID=–0.8A
RL=12.5
D VOUT
G
CPH3303
P.G 50
S
Ratings
min typ max
Unit
10 ns
25 ns
32 ns
32 ns
9.5 nC
1 nC
1.5 nC
–1.0 –1.5 V
ID - VDS
-1.8 –8.0V
-1.6
-1.4
–2.5V
–2.0V
-1.2
-1.0
-0.8
-0.6
-0.4 VGS=–1.5V
-0.2
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Drain-to-Source Voltage, VDS – V
| yfs | - I D
10
VDS=–10V
7
5
3
2
Ta=–25°C75°C
25°C
1.0
7
5
3
2
0.1
-0.01
2 3 5 7 -0.1
2 3 5 7 -1.0
Drain Current, ID – A
23 5
-3.5
VDS=–10V
-3.0
ID - VGS
-2.5
-2.0
-1.5
-1.0
-0.5
00
1000
900
-0.5 -1.0 -1.5 -2.0 -2.5
Gate-to-Source Voltage, VGS – V
-3.0
RDS(on) - VGS
Ta=25°C
800
700
600
ID=–0.8A
500
ID=–0.2A
400
300
200
100
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-to-Source Voltage, VGS – V
No.5988-2/4

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CPH3303
R DS(on) - Ta
600
500
400 ID=–0.2A,VGS=–2.5V
300 ID=–0.8A,VGS=–4V
200
100
0
-60 -40 -20 0 20 40 60 80 100 120 140
Ambient Temperature, Ta – ˚C
7
5
VGS= 0
3
2
IF - VSD
-1.0
7
5
3
2
-0.1
7
5
3
2
-0.01
7
5
3
2
-0.001
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Diode Forward Voltage, VSD – V
Ciss,Coss,Crss - VDS
1000 f = 1MHz
7
5
3
2 Ciss
-10
VDS=–10V
-9 ID=–1.6A
-8
-7
-6
VGS - Q g
100 Coss
7
5
Crss
3
2
10
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
Drain-to-Source Voltage, VDS – V
SW Time - ID
100 VDD=–10V
7 VGS=–4V
5 td(off)
tf
3
2
tr
td(on)
10
7
5
3
7 -0.1
23
5 7 -1.0
Drain Current, ID – A
23
-5
-4
-3
-2
-1
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg – nC
-10
7
IDP=–6.4A
5
3
2
ASO
100µs
ID=–1.6A 100ms 10ms 1ms
-1.0
7
5
3
DC operation
2
Operation in this area
-0.1 is limited by RDS(on).
7
5
3 Ta=25°C
2 1 Pulse
Mounted on a ceramic board (900mm2×0.8mm)
-0.01
-0.1 2 3 5 7 -1.0
2 3 5 7 -10
Drain-to-Source Voltage, VDS – V
2
3
PD - Ta
1.2
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board (900mm 2×0.8mm)
00 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
No.5988-3/4