CPH3407.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 CPH3407 데이타시트 다운로드

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Ordering number : ENN6997
CPH3407
N-Channel Silicon MOSFET
CPH3407
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Package Dimensions
unit : mm
2152A
[CPH3407]
2.9
0.4
3
0.15
0.05
12
1.9
1 : Gate
2 : Source
3 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : CPH3
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
20
±10
5
20
1.2
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KG
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=4V
ID=1A, VGS=2.5V
min
20
0.4
7
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
10 S
28 37 m
35 50 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62001 TS IM TA-3078 No.6997-1/4

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CPH3407
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Switching Time Test Circuit
VIN
4V
0V
PW=10µs
D.C.1%
VIN
G
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=4V, ID=5A
VDS=10V, VGS=4V, ID=5A
VDS=10V, VGS=4V, ID=5A
IS=5A, VGS=0
VDD=10V
ID=3A
RL=3.3
VOUT
D
P.G 50
CPH3407
S
Ratings
min typ max
Unit
630 pF
160 pF
95 pF
13 ns
110 ns
47 ns
65 ns
7.3 nC
1.4 nC
2.1 nC
0.8 1.2 V
ID -- VDS
5.0
4.5
4.0
3.5 1.5V
3.0
2.5
2.0
1.5
1.0
0.5
VGS=1.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT03451
80 RDS(on) -- VGS
Ta=25°C
70
60
50
ID=1A
3A
40
30
20
10
0
0 2 4 6 8 10
Gate-to-Source Voltage, VGS -- V IT03453
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT03452
RDS(on) -- Ta
70
60
50
40
30
IDI=D1=A3A, V, VGGS=S2=.54V.0V
20
10
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03454
No.6997-2/4

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CPH3407
yfs-- ID
5
VDS=10V
3
2
10
7
5
3
2
Ta= --25°C
1.0
7
25°C
5 75°C
3
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
1000
7 VDD=10V
5 VGS=4V
SW Time -- ID
23
3
2
5 7 10
IT03455
100
7 td(off)
5 tf
3
tr
2
td(on)
10
7
5
3
0.1 2 3
4.0
VDS=10V
3.5 ID=5A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT03457
3.0
2.5
2.0
1.5
1.0
0.5
0
01 23456 78
Total Gate Charge, Qg -- nC
IT03459
PD -- Ta
1.4
IF -- VSD
10
7 VGS=0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT03456
Ciss, Coss, Crss -- VDS
1000
f=1MHz
7 Ciss
5
3
2
Coss
100 Crss
7
5
3
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V
ASO
5
3
2
IDP=20A
<10µs
IT03458
100µs
10
7
5
ID=5A
3
2
1.0
7
5
1ms
10ms
DC Ope1r0a0timons
3
2
Operation in this
0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2
Single pulse
Mounted on a ceramic board(900mm2!0.8mm)
0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain-to-Source Voltage, VDS -- V
23 5
IT03460
1.2
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03461
No.6997-3/4