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Ordering number : ENN6862
CPH3414
N-Channel Silicon MOSFET
CPH3414
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2152A
[CPH3414]
2.9
0.4
3
0.15
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12
1.9
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
30
±20
2.2
8.8
1.0
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KP
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=10V
ID=0.5A, VGS=4V
min
30
1.2
1.4
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
2.0 S
115 150 m
190 270 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3065 No.6862-1/4

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CPH3414
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=2.2A
VDS=10V, VGS=10V, ID=2.2A
VDS=10V, VGS=10V, ID=2.2A
IS=2.2A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=1A
RL=15
D VOUT
CPH3414
P.G 50S
Ratings
min typ max
Unit
120 pF
30 pF
15 pF
6 ns
4 ns
17 ns
5 ns
3.6 nC
0.6 nC
0.5 nC
0.9 1.2 V
ID -- VDS
3.0
2.5
2.0 5V
6V
8V
1.5
VGS=3V
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Drain-to-Source Voltage, VDS -- V IT02698
RDS(on) -- VGS
400
Ta=25°C
350
300
250 ID=0.5A 1A
200
150
100
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT02700
3.0
VDS=10V
2.5
ID -- VGS
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT02699
RDS(on) -- Ta
300
250
200 I D=0.5A, V GS=4V
150 ID=1.0A, VGS=10V
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02701
No.6862-2/4

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10
7 VDS=10V
5
3
2
1.0
7
5
3
2
yfs-- ID
25°C
Ta=
--25°C
75°C
0.1
0.01
100
7
5
2 3 5 7 0.1 2 3 5 7 1.0
Drain Current, ID -- A
SW Time -- ID
CPH3414
2 3 5 7 10
IT02702
VDD=15V
VGS=10V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1000
7
5
IF -- VSD
VGS=0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Diode Forward Voltage, VSD -- V IT02703
Ciss, Coss, Crss -- VDS
f=1MHz
3
2 td(off)
10
7 td(on)
5
tr
3
2
1.0
3 5 7 0.1
2 3 5 7 1.0
2 3 57
Drain Current, ID -- A
IT02704
VGS -- Qg
10
VDS=10V
ID=2.2A
8
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Total Gate Charge, Qg -- nC
IT02706
PD -- Ta
1.2
3
2
Ciss
100
7
5
3 Coss
2
Crss
10
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT02705
ASO
10
7
5
IDP=8.8A
3 ID=2.2A
2
100µs
1ms
10ms
1.0
7
5 Operation in
3 this area is
2 limited by RDS(on).
DC
100ms
operation
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm2!0.8mm)
0.1 2 3 5 7 1.0
2 3 5 7 10
23 5
Drain-to-Source Voltage, VDS -- V IT02707
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board(900mm !2 0.8mm)
0
0 20 40 60 80 100 120 140 160
Amibient Tamperature, Ta -- °C
IT02708
No.6862-3/4