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Ordering number : ENN6590
CPH5506
PNP/NPN Epitaxial Planar Silicon Transistors
CPH5506
DC / DC Converter Applications
Applications
Relay drivers, Lamp drivers, Motor drivers.
Features
Composite type with a PNP transistor and an
NPN transistor contained in one package,
facilitating high-density mounting.
The CPH5506 consists of two chips encapsulated
in a package which are equivalent to the CPH3115
and the CPH3215, respectively.
Ultrasmall package facilitate miniaturization in
end products. (0.9mm mounting height)
Package Dimensions
unit : mm
2186
[CPH5506]
2.9
54
3
0.15
0.05
1
0.95
2
0.4
0.4
Specifications
( ):PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Mounted on a ceramic board (600mm2!0.8mm)
Mounted on a ceramic board (600mm2!0.8mm)
1 : Collector(NPN TR)
2 : Collector(PNP TR)
3 : Base(PNP TR)
4 : Common Emitter
5 : Base(NPN TR)
SANYO : CPH5
Ratings
(--30)40
(--)30
(--)5
(--)1.5
(--)5
(--)300
0.9
1.2
150
--55 to +150
Unit
V
V
V
A
A
mA
W
W
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2880 No.6590-1/5

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CPH5506
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Marking : EF
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)30V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)300mA
VCB=(--)10V, f=1MHz
IC=(--)750mA, IB=(--)15mA
IC=(--)750mA, IB=(--)15mA
IC=(--)10µA, IE=0
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Rathings
min typ max
(--)0.1
(--)0.1
200 560
(450)500
(9)8
(--250)150 (--375)225
(--)0.85
(--)1.2
(--30)40
(--)30
(--)5
35
(115)205
30
Unit
µA
µA
MHz
pF
mV
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
Electrical Connection
B1 EC B2
INPUT
50
VR
RB
+
100µF
VBE= --5V
RL
16
+
470µF
VCC=12V
20IB1= --20IB2=IC=750mA
For PNP, the polarity is reversed.
C1
C2
IC -- VCE
[PNP]
--2.0
--1.8 --50mA
--40mA
--1.6 --30mA
--1.4 --20mA
--1.2
--1.0 --8mA --10mA
--0.8 --6mA
--4mA
--0.6
--0.4 --2mA
--0.2
0
0
--1.6
--1.4
IB=0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Collector-to-Emitter Voltage, VCE -- V IT01673
IC -- VBE
[PNP]
VCE= --2V
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V IT01675
IC -- VCE
2.0
1.8 40mA
30mA
1.6
[NPN]
20mA
1.4 8mA 10mA
1.2 6mA
1.0 4mA
0.8
0.6 2mA
0.4
0.2
0 IB=0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT01674
IC -- VBE
[NPN]
1.6
VCE=2V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT01676
No.6590-2/5

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1000
7
5
3
2
Ta=75°C
25°C
--25°C
100
7
5
3
2
hFE -- IC
CPH5506
[PNP]
VCE= --2V
1000
7
5
3
2
Ta=75°C
25°C
--25°C
100
7
5
3
2
hFE -- IC
[NPN]
VCE=2V
10
--0.01
3
2
23
5 7 --0.1
2 3 5 7 --1.0
Collector Current, IC -- A
f T -- IC
23
IT01677
[PNP]
VCE= --10V
10
0.01
3
2
23
5 7 0.1
2 3 5 7 1.0
Collector Current, IC -- A
f T -- IC
23
IT01678
[NPN]
VCE=10V
1000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
--0.01
100
7
5
23
5 7 --0.1
23
5
Collector Current, IC -- A
Cob -- VCB
7 --1.0
2
IT01679
[PNP]
f=1MHz
3
2
100
7
5
3
2
0.01
100
7
5
3
2
23
5 7 0.1
23
5
Collector Current, IC -- A
Cob -- VCB
7 1.0
2
IT01680
[NPN]
f=1MHz
10
7
5
3
2
--0.1
--1.0
7
5
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Collector-to-Base Voltage, VCB -- V IT01681
VCE(sat) -- IC
[PNP]
IC / IB=20
3
2
--0.1
7
5
3
2
Ta=75°C
--25°C
25°C
--0.01
--0.01
23
5 7 --0.1
2 3 5 7 --1.0
23
Collector Current, IC -- A
IT01683
10
7
5
3
2
0.1
1.0
7
5
2 3 5 7 1.0
2 3 5 7 10
23 5
Collector-to-Base Voltage, VCB -- V IT01682
VCE(sat) -- IC
[NPN]
IC / IB=20
3
2
0.1
7
5
3
2
0.01
0.01
Ta=7--52°5C°C
25°C
2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC -- A
IT01684
No.6590-3/5