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Ordering number:ENN6319
TR : PNP Epitaxial Planar Silicon Transistor
SBD : Schottky Barrier Diode
CPH5701
DC/DC Converter Applications
Features
· Composite type with a PNP transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.
· Each device incorporated in the CPH5701 is equiva-
lent to the CPH3106 and to the SBS004, respec-
tively.
· Ultrasmall package facilitates miniaturization in end
products.
Package Dimensions
unit:mm
2156
2.9
54
3
[CPH5701]
0.15
0.05
1
0.95
2
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Current
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
0.4
Conditions
Mounted on a ceramic board (600mm2×0.8mm)
50Hz sine wave, 1 cycle
1 : Cathode
2 : Collector
3 : Base
4 : Emitter
5 : Anode
SANYO : CPH5
Ratings
Unit
–15
–12
–5
–3
–5
–600
0.9
150
–55 to +125
V
V
V
A
A
mA
W
˚C
˚C
15
15
1
10
–55 to +125
–55 to +125
V
V
A
A
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70500TS (KOTO) TA-2783 No.6319–1/5

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CPH5701
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Electrical Connection
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=–12V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–0.5A
VCE=–2V, IC=–3A
VCE=–2V, IC=–0.5A
VCB=–10V, f=1MHz
IC=–1.5A, IB=–30mA
IC=–1.5A, IB=–30mA
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VR
VF1
VF2
IR
C
trr
Rthj-a
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2×0.8mm)
AE
B
Ratings
min typ max
Unit
200
70
280
36
–110
–0.85
–15
–12
–5
30
90
10
–0.1 µA
–0.1 µA
560
–165
–1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
15 V
0.30 0.35 V
0.35 0.40 V
500 µA
42 pF
15 ns
110 ˚C/W
CC
(Top view)
Switching Time Test Circuit
[TR] [SBD]
PW=20µs
D.C.1%
INPUT
VR
50
IB2
IB1
RB
+
220µF
OUTPUT
+
470µF
RL
Duty10%
10µs
50100
–5V
VBE=5V
VCC=–5V
–20IB1= 20IB2= IC=–1.5A
10
10mA
trr
No.6319–2/5

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CPH5701
IC -- VCE
[TR]
--2.0
--1.8 --14mA
--12mA
--200
--180
--1.6
--10mA
--160
--1.4
--8mA
--140
--1.2
--120
--6mA
--1.0
--100
--0.8
--4mA
--80
--0.6
--60
--0.4
--2mA
--40
--0.2
0 IB=0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Collector-to-Emitter Voltage, VCE – V IT01017
--3.0
VCE= --2V
IC -- VBE
[TR]
--2.5
--20
0
0
1000
7
5
--2.0
3
2
IC -- VCE
--0.8mA
[TR]
--0.7mA
--0.6mA
--0.5mA
--0.4mA
--0.3mA
--0.2mA
--0.1mA
IB=0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Collector-to-Emitter Voltage, VCE – V IT01018
hFE -- IC
[TR]
VCE= --2V
Ta=75°C
25°C
--25°C
--1.5
--1.0
--0.5
0
0
5
3
2
--0.2
--0.4
--0.6
--0.8
Base-to-Emitter Voltage, VBE – V
fT -- IC
--1.0
IT00856
[TR]
VCE= --2V
100
7
5
3
2
10
5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Collector Current, IC – A
IT00858
VCE(sat) -- IC
[TR]
3
2 IC / IB= --20
--100
7
5
3
2
--10
7
5
3
2
Ta=75--°2C5°C
25°C
--1.0
--0.01
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC – A
23 5
IT00860
100
7
5
3
2
10
--0.01
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
--0.1
3
2
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC – A
Cob -- VCB
23 5
IT00857
[TR]
f=1MHz
23
5 7 --1.0
2 3 5 7 --10
23
Collector-to-Base Voltage, VCB – V IT00859
VCE(sat) -- IC
[TR]
IC / IB= --50
--100
7
5
3
2
Ta=75--°2C5°C
25°C
--10
7
5
3
2
--1.0
--0.01
2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC – A
23 5
IT00861
No.6319–3/5