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Power Transistors
2SB1155
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1706
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–130
–80
–7
–25
–15
80
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
VCE = –2V, IC = –8A
IC = –7A, IB = – 0.35A
IC = –15A, IB = –1.5A
IC = –7A, IB = – 0.35A
IC = –15A, IB = –1.5A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –7A, IB1 = – 0.7A, IB2 = 0.7A,
VCC = –50V
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
–10 µA
–50 µA
–80 V
45
90 260
30
– 0.5
V
–1.5 V
–1.5 V
–2.5 V
25 MHz
0.5 µs
1.3 µs
0.2 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1

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Power Transistors
120
100
(1)
80
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3W)
60
40
20 (2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
VCE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
–30
1000
300
100
fT — IC
VCE=–10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
IC — VCE
–20
IB=–300mA
–16
TC=25˚C
–200mA
–12 –140mA
–100mA
–8 –80mA
–60mA
–4 –40mA
–20mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1155
–10
–3
–1
– 0.3
– 0.1
VCE(sat) — IC
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
(2)
(1)
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
–30
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1 TC=–25˚C
– 0.3 100˚C 25˚C
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
hFE — IC
VCE=2V
300 TC=100˚C
25˚C
100 –25˚C
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30
Collector current IC (A)
ton, tstg, tf — IC
10
3
tstg
1
ton
0.3 tf
0.1
0.03
0.01
0
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–50V
TC=25˚C
–1 –2 –3 –4 –5 –6 –7 –8
Collector current IC (A)
Area of safe operation (ASO)
–100
–30 ICP
–10 IC
–3
Non repetitive pulse
TC=25˚C
t=1ms
10ms
DC
–1
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2

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Power Transistors
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SB1155
3