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Ordering number : ENN6937
CPH6352
P-Channel Silicon MOSFET
CPH6352
Preliminary
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2151A
2.9
6 54
[CPH6352]
0.15
0.05
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
--30
±10
--3
--12
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JF
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--4V
ID=--0.5A, VGS=--2.5V
min
--30
--0.4
3
Ratings
typ
max
Unit
V
--10 µA
±10 µA
--1.4 V
4.4 S
120 160 m
170 240 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-2664 No.6937-1/4

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CPH6352
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=--10V, VGS=--10V, ID=--3A
VDS=--10V, VGS=--10V, ID=--3A
VDS=--10V, VGS=--10V, ID=--3A
IS=--3A, VGS=0
Switching Time Test Circuit
0V VIN
--4V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --1.5A
RL=10
D VOUT
P.G 50
S CPH6352
Ratings
min typ max
Unit
380 pF
180 pF
80 pF
15 ns
45 ns
85 ns
62 ns
15 nC
1 nC
3 nC
--0.85
--1.5 V
ID -- VDS
--3.0
--2.5
--2.0V
--2.0
--1.5
--1.0
VGS= --1.5V
--0.5
0
0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT03119
RDS(on) -- VGS
Ta=25°C
ID= --1.5A
--0.5A
--1 --2 --3 --4 --5 --6 --7 --8 --9 10
Gate-to-Source Voltage, VGS -- V IT03121
--6
VDS= --10V
--5
ID -- VGS
--4
--3
--2
--1
0
0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
--60
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT03120
IIDD==---0-1.5.5AA, ,VVGGSS==---2-4.5.0VV
--40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03122
No.6937-2/4

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CPH6352
10
7 VDS= --10V
5
3
2
1.0
7
5
3
2
yfs-- ID
Ta7=5°-C-25°C25°C
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
IT03123
2 SW Time -- ID
VDD= --15V
VGS= --4V
100 td(off)
7 tf
5
tr
3
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
1000
7
5
3
2
IF -- VSD
VGS=0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V IT03124
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
2
td(on)
10
--0.1
2
--10
VDS= --10V
ID= --3A
3 5 7 --1.0
Drain Current, ID -- A
VGS -- Qg
--8
2
35
IT03125
--6
--4
--2
0
0 2 4 6 8 10 12 14 16
Total Gate Charge, Qg -- nC
IT03127
PD -- Ta
2.0
100 Crss
7
5
0 --2 --4 --6 --8 --10 --12 --14
Drain-to-Source Voltage, VDS -- V IT03126
ASO
2 IDP= --12A
100µs
--10
7
5
3
ID= --3A
2
--1.0
7
5
DC
100m1s0ms
operation
1ms
3
2 Operation in
--0.1 this area is
7 limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(900mm2!0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10
Drain-to-Source Voltage, VDS -- V
23 5
IT03128
1.6
1.5
1.0
0.5
Mounted on a ceramic board(900mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03129
No.6937-3/4