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PD - 5.023B
IGBT SIP MODULE
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
CPV363MF
Fast IGBT
1
Q1
3
6 Q2
D1
Q3
9
4
D2
12 Q4
D3
Q5
15
10
D4
18 Q6
D5
16
D6
Product Summary
7 13
Output Current in a Typical 5.0 kHz Motor Drive
7.65 ARMS per phase (2.4 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
16
8.7
50
50
6.1
50
±20
2500
36
14
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
19
IMS-2
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
C-149
Typ.
0.1
20 (0.7)
Max.
3.5
5.5
Units
°C/W
g (oz)
Revision 1
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CPV363MF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.69 — V/°C VGE = 0V, IC = 1.0mA
— 1.5 1.6
IC = 8.7A
VGE = 15V
— 1.9 — V IC = 16A
See Fig. 2, 5
— 1.6 —
IC = 8.7A, TJ = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
6.0 8.0 — S VCE = 100V, IC = 8.7A
— — 250 µA VGE = 0V, VCE = 600V
— — 2500
VGE = 0V, VCE = 600V, TJ = 150°C
— 1.4 1.7 V IC = 12A
See Fig. 13
— 1.3 1.6
IC = 12A, TJ = 150°C
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 23 30
— 2.4 5.9
IC = 16A
nC VCC = 400V
— 9.2 15
See Fig. 8
— 25 —
TJ = 25°C
— 21 —
— 210 300
ns IC = 8.7A, VCC = 480V
VGE = 15V, RG = 23
— 300 450
Energy losses include "tail" and
— 0.44 —
diode reverse recovery
— 2.0 — mJ See Fig. 9, 10, 11, 18
— 2.4 3.2
— 25 —
— 21 —
— 280 —
— 550 —
TJ = 150°C, See Fig. 9, 10, 11, 18
ns IC = 8.7A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail" and
— 3.4 — mJ diode reverse recovery
— 670 —
VGE = 0V
— 100 —
— 10 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
— 42 60 ns TJ = 25°C See Fig.
— 80 120
TJ = 125°C
14
IF = 12A
— 3.5 6.0
— 5.6 10
A TJ = 25°C See Fig.
TJ = 125°C
15
VR = 200V
— 80 180 nC TJ = 25°C See Fig.
— 220 600
TJ = 125°C 16 di/dt = 200A/µs
— 180 — A/µs TJ = 25°C See Fig.
— 116 —
TJ = 125°C 17
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 23, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
C-150
Pulse width 5.0µs,
single shot.
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CPV363MF
12 3.7
9 2.8
6 1.9 S
3 TC= 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VCC = 60% of Rated Voltage
0
0.1
1
f, Frequency (kHz)
10
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
0.9
0
100
1000
TJ = 25 °C
100
TJ = 15 0°C
10
VGE = 15V
20µs PULSE WIDTH
1
1 10
VC E , C ollector-to-E mitter V oltage (V )
Fig. 2 - Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
5
VCC = 100V
5µs PULSE WIDTH
10 15 20
VG E , G ate-to-E m itter Volta g e (V )
Fig. 3 - Typical Transfer Characteristics
C-151
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CPV363MF
40
VGE = 15V
30
20
10
0
25 50 75 100 125 150
TC , C ase Tem perature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
3.5
VGE = 15V
80µs PULSE WIDTH
3.0
2.5
2.0
1.5
IC = 34A
IC = 17A
IC = 8.5A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC , C ase Tem perature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
10
D = 0 .5 0
1
0.2 0
0.1 0
0 .05
0.0 2
0.1 0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
N otes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PD M x Z thJC + T C
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-152
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CPV363MF
1400
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
1200 Cres = C gc
Coes = Cce + C gc
1000
Cies
800
Coes
600
400
Cres
200
0
1 10 100
V C E , C ollector-to-E m itter V oltage (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
2.7
VC C = 480V
VG E = 15V
TC = 25°C
2.6 IC = 17A
2.5
2.4
2.3
2.2
0
10 20 30 40 50 60
R G , G ate Resistance ()
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 17A
16
12
8
4
0
0 5 10 15 20 25
Q g , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
30
10
I C = 34A
I C = 17A
I C = 8.5A
RG = 23
V GE = 1 5V
1 V CC = 48 0V
-60 -40 -20 0 20 40 60 8 0 1 00 120 140 160
TC, C a se T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-153
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