CQY80NX.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 CQY80NX 데이타시트 다운로드

No Preview Available !

CQY80X, CQY80NX
CQY80, CQY80N
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l CQY80X is VDE 0884 in 3 available
lead forms : -
- STD
- G form
- SMD approved to CECC 00802
CQY80NX - VDE 0884 pending
l CQY80X is certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
CQY80NX - EN60950 pending
DESCRIPTION
The CQY80 series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Isolation Voltage (5.3kV ,7.5kV )
RMS
PK
l Custom electrical selections available
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
2.54 Dimensions in mm
1
7.0
6.0 2
3
1.2
7.62
6.62 4.0
3.0
3.0
0.5
0.5
3.35
7.62
0.26
6
5
4
13°
Max
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BV
ECO
Power Dissipation
32V
70V
6V
160mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
http://www.isocom.com
DB90035m-AAS/A1

No Preview Available !

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
Input
Forward Voltage (VF)
Reverse Voltage (V )
R
Reverse Current (IR)
1.2 1.60 V
6V
10 µA
Output
Collector-emitter Breakdown (BV )
CEO
( Note 2 )
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (I )
CEO
32
6
V
V
200 nA
Coupled IC / IF (CTR) (Note 2)
0.5
Current Transfer Ratio (CTR) (Note 2) 50
%
Collector-emitter Saturation VoltageV
CE(SAT)
0.3 V
TEST CONDITION
IF = 50mA
I
R
=
10µA
VR = 6V
I = 1mA
C
IE = 100µA
V = 20V
CE
10mA IF , 5V VCE
10mA IF , 5V VCE
10mA I , 1mA I
FC
Input to Output Isolation Voltage V 5300
ISO
7500
V
RMS
VPK
See note 1
See note 1
Input-output Isolation Resistance RISO 5x1010
VIO = 500V (note 1)
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
Type
RL = 100see fig 1
RL = 1ksee fig 2
td tr ton ts tf toff IC ton toff IF
µs µs µs µs µs µs mA µs µs mA
CQY80 4.0 7.0 11.0 0.3 6.7 7.0 5
CQY80N
25.0 42.5 10
VCC = 5V
VCC = 5V
Output
Output
5050
RL = 100
RL = 1k
Figure 1
Figure 2
7/12/00
DB90035m-AAS/A1

No Preview Available !

Collector Power Dissipation vs. Ambient Temperature
200
Collector Current vs. Collector-emitter Voltage
50
T = 25°C
A
150
100
50
0
-30 0 25 50 75 100 125
Ambient temperature T ( °C )
A
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
0
-30
0 25 50 75 100 125
Ambient temperature TA ( °C )
40
50
30
30
20
15
20 10
10
0
0
2
4
IF = 5mA
6 8 10
Collector-emitter voltage VCE ( V )
Current Transfer Ratio vs. Forward Current
320
280
VCE = 5V
TA = 25°C
240
200
160
120
80
40
0
1
2 5 10 20
Forward current I (mA)
F
50
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
IF = 10mA
VCE = 5V
1.0
0.5
0
-30
0
25 50 75 100
Ambient temperature TA ( °C )
7/12/00
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
IF = 10mA
0.20
I = 1mA
C
0.16
0.12
0.08
0.04
0
-30
0 25 50 75 100
Ambient temperature T ( °C )
A
DB90035m-AAS/A1