2N6236.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2N6236 데이타시트 다운로드

No Preview Available !

2N6236-2N6241
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TC = 110°C unless otherwise noted)
Rating
Symbol
Value
Unit
Repetitive peak forward and reverse blocking voltage (1)
(1/2 sine wave, RGK = 1000, TC = -40 to +110°C)
2N6236
2N6237
2N6238
2N6239
2N6240
2N6241
VDRM
VRRM
30
50
100
200
400
600
Volts
Non-repetitive peak reverse blocking voltage
(1/2 sine wave, RGK = 1000, TC = -40 to +110°C)
2N6236
2N6237
2N6238
2N6239
2N6240
2N6241
VRSM
50
100
150
250
450
650
Volts
Average on-state current
(TC = -40 to +90°C)
(TC = 100°C)
IT(AV)
2.6
1.6
Amps
Surge on-state current
(1/2 sine wave, 60Hz, TC = 90°C)
(1/2 sine wave, 1.5ms, TC = 90°C)
Circuit fusing (TC = -40 to +110°C, t = 8.3ms)
ITSM 25 Amps
35
I2t 2.6
A2s
Peak gate power (pulse width = 10µs, TC = 90°C)
PGM 0.5 Watts
Average gate power (t = 8.3ms, TC = 90°C)
PG(AV)
0.1
Watts
Peak forward gate current
IGM 0.2 Amps
Peak reverse gate voltage
Operating junction temperature range
VRGM
TJ
6
-40 to 110
Volts
°C
Storage temperature range
Tstg -40 to 150
°C
Stud torque
6 In. lb.
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested
with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Max
3
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000unless otherwise noted)
Characteristic
Symbol Min
Peak forward or reverse blocking current
(Rated VDRM or VRRM)
TC = 25°C
TC = 110°C
IDRM,
IRRM
-
-
Peak forward “on” voltage
(ITM = 8.2A peak, pulse width = 1 to 2ms, 2% duty cycle)
VTM -
Typ
-
-
-
Max
Unit
10 µA
200
Volts
2.2

No Preview Available !

2N6236-2N6241
Characteristic
Gate trigger current (continuous dc)
(VAK = 12Vdc, RL = 24)
(VAK = 12Vdc, RL = 24, TC = -40°C)
Gate trigger voltage (continuous dc)
(Source voltage = 12V, RS = 50)
(VAK = 12Vdc, RL = 24, TC = -40°C)
Gate non-trigger voltage
(VAK = rated VDRM, RL = 100, TC = 110°C)
Holding current
(VAK = 12Vdc, IGT = 2mA)
(initiating on state current = 200mA)
TC = 25°C
TC = -40°C
Total turn-on time
(Source voltage = 12V, RS = 6k)
(ITM = 8.2A, IGT = 2mA, rated VDRM)
(Rise time = 20ns, pulse width = 10µs)
Forward voltage application rate
(VD = Rated VDRM, TC = 110°C)
MECHANICAL CHARACTERISTICS
Case
TO-126
Marking
Alpha-numeric
Pin out
See below
SILICON CONTROLLED RECTIFIERS
Symbol Min
IGT -
-
VGT -
VGD 0.2
Typ
-
-
-
-
Max
200
500
1
-
Unit
µA
Volts
Volts
IH
tgt
dv/dt
-
-
-
-
mA
-5
- 10
µs
-2
V/µs
10 -
TO-126
Inches
Millimeters
Min Max Min Max
A 0.425 0.435 10.80 11.050
B 0.295 0.305 7.490 7.750
C 0.095 0.105 2.410 2.670
D 0.020 0.026 0.510 0.660
F 0.115 0.125 2.920 3.180
G 0.091 0.097 2.310 2.460
H 0.050 0.095 1.270 2.410
J 0.015 0.025 0.380 0.640
K 0.595 0.655 15.110 16.640
M 3° TYP
3° TYP
Q 0.148 0.158 3.760 4.010
R 0.045 0.055 1.140 1.400
S 0.025 0.035 0.640 0.890
U 0.145 0.155 3.680 3.940
V 0.040 - 1.020 -

No Preview Available !

2N6236-2N6241
SILICON CONTROLLED RECTIFIERS