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SMD Type
Rectifiers Diodes
DB101S~DB107S (KB101S~KB107S)
Diodes
Features
Ideal for printed circuit board
Reliable low cost construction
utilizing molded plastic technique
High surge current capability
DBS
-
~
.04 7 (1.2)
.037(0.95)
+ ..
.25 6 (6.5)
.244(6.2) . .
~
Unit: mm
..
.063(1.6)
.05 5 (1.4)
.346(8.8)
.323(8.2)
.205(5.2)
.19 7 (5.0)
.134(3.4)
.1 24 (3 .15)
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Forward Voltage at 1.0A
Averaged Forward Current.Ta=40
Peak Forward Surge Current
Maximum DC Reverse Current Ta=25
Ta=125
Junction Temperature
Storage Temperature
Symbol
VRRM
VRMS
VDC
VF
IFAV
IFSM
IR
Tj
Tstg
DB
101S
50
35
50
DB
102S
100
70
100
DB DB DB
103S 104S 105S
200 400 600
140 280 420
200 400 600
1.1
1
50
10
500
150
-55 to 150
DB
106S
800
560
800
DB
107S
1000
700
1000
Unit
V
A
μA
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SMD Type
Diodes
Rectifiers Diodes
DB101S~DB107S (KB101S~KB107S)
Typical Characterisitics
FIG. 1- MAXIMUN DERATING CURVE FOR
OUTPUT RECTIFIED CURRENT
1.0
0.6''(1.5mm)
0.8
Copper Pauls .51''x.51''
0.6 (13mmx13mm)
0.4
0.2
0
20
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
40 60
80
100 120 140 150
AMBIENT TEMPERATURE, C
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
60
TJ=25
50 Single sine-wave
(JEDEC Method)
40
30
20
10
0
1 2 4 6 10
20 40 60
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
TJ=125
10
1
1.0
0.1
.10
TJ=25
0.01
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 4-TYPICAL FORWARD CHARACTERISTICS
PER BRIDGE ELEMNT
10
1
0.1
0.01
0.4
0.6
TJ=25
PULSE WIDTH:300uS
1% DUTY CYCLE
0.8 1.0 1.2 1.4
FORWARD VOLTAGE,(V)
1.6
FIG. 3-TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
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10
TJ=25
f=1.0MHZ
Visg=50mV p-p
1
1 10
REVERSE VOLTAGE.(V)
100