Maker : Advanced Power Electronics
Part No. : 01N60P

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www.DataSheet4U.com AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-220 600V 8Ω 1.6A Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,DC-AC converters for telecom, industrial and consumer environment. G D S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 1.6 1 6 39 0.31 2 Units V V A A A W W/℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 13 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 62 Units ℃/W ℃/W 200705051-1/4 Data & specifications subject to change without notice AP01N60P www.DataSheet4U.com Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.6 7.2 0.8 7.7 1.5 2.6 8 5 14 7 286 25 5 Max. Units 8 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=0.8A VDS=VGS, ID=250uA VDS=50V, ID=0.8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A RG=10Ω,VGS=10V RD=187.5Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 1.6 6 1.5 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 3 Tj=25℃, IS=1.6A, VGS=0V Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A. 3.Pulse width <300us , duty cycle <2%. 2/4 www.DataSheet4U.com AP01N60P 0.9 1.5 T C =25 C o ID , Drain Current (A) ID , Drain Current (A) 10V 6.0V 5.5V T C =150 o C 10V 6.0V 5.5V 1 0.6 5.0V 0.5 5.0V 0.3 V G = 4.5 V V G = 4.5 V 0 0 5 10 15 20 0 0 5 10 15 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 Normalized BVDSS (V) Normalized RDS(ON) 1.1 I D =0.8A V G =10V 2 1 1 0.9 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 IS (A) 10 T j = 150 o C T j = 25 o C VGS(th) (V) 3 1 2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 www.DataSheet4U.com AP01N60P f=1.0MHz 16 1000 VGS , Gate to Source Voltage (V) 12 I D =1.6A V DS =480V 100 C iss 8 C (pF) C oss 10 4 C rss 0 0 2 4 6 8 10 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Vo...

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