Maker : ON Semiconductor
Part No. : 1.5KE100A

  Datasheet PDF : 1.5KE100A.pdf
  Cross Reference : 1.5KE100A Cross Reference
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Product Information

1N6267A Series 1500 Watt Mosorb™ Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic™ axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. Specification Features: Cathode Anode • • • • • • • Working Peak Reverse Voltage Range – 5.8 V to 214 V Peak Power – 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1 ns AXIAL LEAD CASE 41A PLASTIC L 1N6 xxxA 1.5KE xxxA YYWW L = Assembly Location 1N6xxxA = JEDEC Device Code 1.5KExxxA = ON Device Code YY = Year WW = Work Week Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Rating Peak Power Dissipation (Note 1) @ TL ≤ 25°C Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C Thermal Resistance, Junction–to–Lead Forward Surge Current (Note 2) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5.0 20 RqJL IFSM TJ, Tstg 20 200 – 65 to +175 Unit Watts Watts mW/°C °C/W Amps °C ORDERING INFORMATION Device 1.5KExxxA 1.5KExxxARL4 1N6xxxA 1N6xxxARL4* Package Axial Lead Axial Lead Axial Lead Axial Lead Shipping 500 Units/Box 1500/Tape & Reel 500 Units/Box 1500/Tape & Reel *1N6302A Not Available in 1500/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices © Semiconductor Components Industries, LLC, 2002 1 June, 2002 – Rev. 5 Publication Order Number: 1N6267A/D 1N6267A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A) Symbol IPP VC VRWM IR VBR IT QVBR IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I Uni–Directional TVS http://onsemi.com 2 1N6267A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A) JEDEC Device (Note 4) VRWM (Note 5) (Volts) Breakdown Voltage IR @ VRWM (mA) VBR (Note 6) (Volts) Min Nom Max @ IT (mA) VC @ IPP (Note 7) VC (Volts) IPP (A) QVBR (%/°C) Device 1.5KE6.8A 1.5KE7.5A 1.5KE8.2A 1.5KE9.1A 1.5KE10A 1.5KE11A 1.5KE12A 1.5KE13A 1N6267A 1N6268A 1N6269A 1N6270A 1N6271A 1N6272A 1N6273A 1N6274A 5.8 6.4 7.02 7.78 8.55 9.4 10.2 11.1 1000 500 200 50 10 5 5 5 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 6.8 7.5 8.2 9.1 10 11 12 13 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 10 10 10 1 1 1 1 1 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 143 132 124 112 103 96 90 82 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 1.5KE15A 1.5KE16A 1.5KE18A 1.5KE20A 1.5KE22A 1.5KE24A 1.5KE2...

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