Maker : ST Microelectronics
Part No. : 1N5811U

  Datasheet PDF : 1N5811U.pdf
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Product Information

www.DataSheet4U.com 1N5811U Aerospace 6 A fast recovery rectifier Features A K K ■ ■ ■ ■ ■ ■ ■ ■ ■ Aerospace applications Surface mount hermetic package High thermal conductivity materials Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Package weight: 0.18 g Target radiation qualification – 150 krad (Si) low dose rate – 3 Mrad (Si) high dose rate Under ESCC qualification A LCC2B Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B package whose footprint is 100% compatible with industry standard solutions in D5B. The 1N5811U is suitable for switching mode power supplies and high frequency DC to DC converters such as low voltage high frequency inverter, free wheeling or polarity protection . ■ Table 1. Order code 1N5811UB1 Device summary(1) ESCC detailed specification 5101/013/11 5101/013/12 Quality level Engineering model Flight part Flight part Lead finish Gold plated Gold plated Solder dip EPPL Y Y 6A 150 V 175 °C 0.995 V IF(AV) VRRM Tj(max) VF (max) 1N5811U01B 1N5811U02B 1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions. July 2009 Doc ID 16005 Rev 1 1/7 www.st.com 7 www.DataSheet4U.com Characteristics 1N5811U 1 Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Tsol Characteristics Absolute ratings (limiting values) Parameter Repetitive peak reverse voltage Forward rms current Average forward rectified current Forward surge current Storage temperature range Maximum operating junction temperature Maximum soldering temperature (1) Tc = 135 °C, δ = 0.5 tp = 8.3 ms sinusoidal tp = 10 ms sinusoidal Value 150 10 6 105 A 100 -65 to + 175 175 245 °C °C °C Unit V A A 1. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed. Table 3. Symbol Rth (j-c) Thermal resistance Parameter Junction to case Value 6.5 Unit °C/W Table 4. Symbol Static electrical characteristics Parameter Tests conditions Tj = 25 °C VR = 150 V VR = 160 V IF = 3 A IF = 4 A IF = 6 A Min. Typ. Max. 2 30 10 10 865 900 800 1075 955 mV Unit µA µA IR (1) Reverse current Tj = 125 °C Tj = 25 °C Tj = -65 °C Tj = 25 °C Tj = 25 °C VF (2) Forward voltage Tj = 125 °C Tj = -65 °C Tj = 25 °C 1. Pulse test : tp = 5 ms, δ < 2% 2. Pulse test : tp = 680 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.68 x IF(AV) + 0.03 IF2(RMS ) 2/7 Doc ID 16005 Rev 1 www.DataSheet4U.com 1N5811U Table 5. Symbol tRR VFP tFR Cj Characteristics Dynamic characteristics Parameter Test conditions IF = IR = 1 A, IRR = 0.1 A, dI/dt = -100 A/µs, (min) IF = 1 A, Vr = 30 V, dI/dt = -50 A/µs, Min. Typ Max. 30 ns 35 2.2 15 60 V ns pF Unit Reverse recovery time Forward recovery voltage IFM = 500 mA Forward recovery time Diode capacitance IFM = 500 mA, VFR = 1.1 x VF VR = 10 V, F = 1 MHz Figure 1. IFM(A) 20 18 16 14 12 10 8 6 4 2 0 0.0 0.2 Forward voltage drop versus forward current (typical values) Figure 2. IFM(A) Forward voltage drop versus forward current (maximum values) 20 18 16 14 12 Tj=125 °C 10 8 Tj=-65 °C Tj=125 °C 6 4 Tj=25 °C Tj=-65 °C Tj=25 °C VFM(V) 0.4 0.6 0.8 1.0 1.2 1.4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 VFM(V) 1.2 1.4 Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Relative variation of thermal impedance, junction to case, versus pulse duration IR(µA) 1.E+01 Tj=125 °C 1.0 0.9 0.8 Zth(j-c)/Rth(j-c) LCC2B 1.E+00 0.7 0.6 1.E-01 Tj=75 °C 0.5 0.4 0.3 Single pulse 1.E-02 Tj= 25 °C 0.2 0.1 tP(s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-03 0 20 40 60 80 100 VR(V) 120 140 160 0.0 1.E-05 Doc ID 16005 Rev 1 3/7 www.DataSheet4U.com Characteristics Figure 5. Reverse recovery time versus dIF/dt Figure 6. 1N...

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