Maker : ON Semiconductor
Part No. : 1N5819

Datasheet PDF : 1N5819.pdf
Cross Reference : 1N5819 Cross Reference
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Product Information

www.DataSheet4U.com 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com • • • • Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are Pb−Free Devices* SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds • Polarity: Cathode Indicated by Polarity Band • ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) AXIAL LEAD CASE 59 STYLE 1 MARKING DIAGRAM A 1N581x YYWWG G A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week G =Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 July, 2006 − Rev. 10 Publication Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non−Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W) Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions, half−wave, single phase 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO TA IFSM TJ, Tstg TJ(pk) 85 1N5817 20 1N5818 30 1N5819 40 Unit V 24 14 36 21 1.0 80 25 (for one cycle) −65 to +125 150 48 28 V V A 75 °C A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Note 1) Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 80 Unit °C/W ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Symbol vF 1N5817 0.32 0.45 0.75 1.0 10 1N5818 0.33 0.55 0.875 1.0 10 1N5819 0.34 0.6 0.9 1.0 10 Unit V Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25°C) (TL = 100°C) 1. Lead Temperature reference is cathode lead 1/32 in from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. IR mA http://onsemi.com 2 1N5817, 1N5818, 1N5819 NOTE 3. — DETERMINING MAXIMUM RATINGS 125 TR, REFERENCE TEMPERATURE ( C) Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). (1) TA(max) = TJ(max) − RqJAPF(AV) − RqJAPR(AV) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction ...

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