Maker : MotorolaInc
Part No. : 1N5818

  Datasheet PDF : 1N5818.pdf
  Cross Reference : 1N5818 Cross Reference
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Product Information

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case • Shipped in plastic bags, 1000 per bag. • Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the part number • Polarity: Cathode Indicated by Polarity Band • Marking: 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non–Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (2) (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W) Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, half–wave, single phase 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5817 20 1N5817 1N5818 1N5819 1N5817 and 1N5819 are Motorola Preferred Devices SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS CASE 59–04 1N5818 30 1N5819 40 Unit V 24 14 36 21 1.0 48 28 V V A TA IFSM 85 80 25 (for one cycle) 75 °C A TJ, Tstg TJ(pk) –65 to +125 150 °C °C THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance, Junction to Ambient Symbol RθJA Max 80 Unit °C/W ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2) Characteristic Maximum Instantaneous Forward Voltage (1) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) (TL = 25°C) (TL = 100°C) Symbol vF 1N5817 0.32 0.45 0.75 1.0 10 1N5818 0.33 0.55 0.875 1.0 10 1N5819 0.34 0.6 0.9 1.0 10 Unit V Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. (2) Lead Temperature reference is cathode lead 1/32″ from case. IR mA Preferred devices are Motorola recommended choices for future use and best overall value. Rev 3 ©RectifierInc. 1996 Data Motorola, Device 1 1N5817 1N5818 1N5819 NOTE 1 — DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) – RθJAPF(AV) – RθJAPR(AV) (1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125°C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RθJA = Junction–to–ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) – RθJAPR(AV) (2) Substituting equation (2) into equation (1) yields: TA(max) = TR – RθJAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is eviden...

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