Maker : ST Microelectronics
Part No. : 1N5819U

  Datasheet PDF : 1N5819U.pdf
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Product Information

www.DataSheet4U.com 1N5819U Aerospace 45 V power Schottky rectifier Features A K K ■ ■ ■ ■ ■ ■ ■ ■ ■ Aerospace applications Surface mount hermetic package High thermal conductivity materials Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Package weight: 0.18 g Target radiation qualification – 150 krad (Si) low dose rate – 3 Mrad (Si) high dose rate Under ESCC qualification A LCC2B Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B package. The 1N5819U is suitable for switching mode power supplies and high frequency DC to DC converters such as low voltage high frequency inverter, free wheeling or polarity protection. ■ Table 1. Order code 1N5819UB1 Device summary(1) ESCC detailed specification 5103/028/04 5103/028/05 Quality level Engineering model Flight part Flight part Lead finish Gold plated Gold plated Solder dip EPPL Y Y 1A 45 V 150 °C 0.45 V IF(AV) VRRM Tj(max) VF (max) 1N5819U01B 1N5819U02B 1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions. August 2009 Doc ID 16006 Rev 1 1/7 www.st.com 7 www.DataSheet4U.com Characteristics 1N5819U 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Tsol 1. Absolute ratings (limiting values) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Maximum soldering temperature (2) (1) Value 45 10 Tc = 135 °C δ = 0.5 tp = 10 ms sinusoidal 1 25 -65 to + 150 150 245 Unit V A A A °C °C °C dPtot 1 _________ < __________ Rth(j-a) dTj condition to avoid runaway for a diode on its own heatsink 2. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed. Table 3. Symbol Rth(j-c) Thermal resistances Parameter Junction to case Value 16 Unit °C/W 2/7 Doc ID 16006 Rev 1 www.DataSheet4U.com 1N5819U Characteristics Table 4. Symbol Static electrical characteristics Parameter Test conditions Tj = 25 °C Tj = 100 °C Tj = -55 °C Tj = -55 °C VR = 45 V VR = 45 V VR = 40 V VR = 40 V VR = 35 V VR = 24 V VR = 12 V VR = 6 V IF = 0.1 A Min. IF = 1A IF = 3.1 A Typ. Max. 20 3.5 20 10 15 3 2.5 1.6 1.2 1 350 490 450 650 800 mV mA µA Unit µA mA IR(1) Reverse leakage current Tj = 25 °C Tj = 100 °C Tj = 100 °C Tj = 100 °C Tj = 100 °C Tj = 100 °C Tj = 25 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 100 °C Tj = - 55 °C Tj = 25 °C 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 680 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.285 x IF(AV) + 0.165 IF2(RMS) Table 5. Symbol Dynamic characteristics Parameter Diode capacitance Test conditions VR = 5 V, F = 1 MHz Min. Typ. Max. 70 Unit pF Cj Figure 1. PF(AV)(W) Average forward power dissipation Figure 2. versus average forward current 1.2 Average forward current versus ambient temperature (δ = 0.5) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 IF(AV)(A) Rth(j-a) = Rth(j-c) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ=1 1.0 0.8 0.6 0.4 T δ=tp / T tp T δ=tp / T tp 0.2 0.1 0.0 0.0 0.2 0.4 06 0.8 1.0 1.2 IF(AV)(A) 1.4 1.6 0.0 Tamb(°C) 0 25 50 75 100 125 150 Doc ID 16006 Rev 1 3/7 www.DataSheet4U.com Characteristics 1N5819U Figure 3. Non repetitive surge peak forward current versus overload duration (maximum values) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration IM(A) 16 14 12 10 8 6 4 IM 1.0 0.9 0.8 0.7 TC = 25 °C TC = 75 °C Zth(j-c) / Rth(j-c) 0.6 0.5 0.4 0.3 0.2 Single pulse TC = 125 °C δ = 0.5 t 2 0 1.E-03 t(s) 1.E-02 1.E-01 1.E+00 0.1 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp(s) 1.E+01 Figure 5. Reverse leakage current versus reverse voltag...

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