Maker : Philips Semiconductors
Part No. : 1N5819

  Datasheet PDF : 1N5819.pdf
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. 1996 May 03 2 Philips Semiconductors Product specification Schottky barrier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR 1N5817 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRWM crest working reverse voltage 1N5817 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward current PARAMETER continuous reverse voltage 1N5817; 1N5818; 1N5819 CONDITIONS − − − − − − − − − − − − Tamb = 55 °C; Rth j-a = 100 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method; Tj = Tj max prior to surge: VR = 0 − − MIN. MAX. 20 30 40 24 36 48 20 30 40 20 30 40 1 25 V V V V V V V V V V V V A A UNIT Tstg Tj Notes storage temperature junction temperature −65 − +175 125 °C °C 1. Refer to SOD81 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 03 3 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage 1N5817 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage 1N5818 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage 1N5819 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A IR Cd reverse current diode capacitance 1N5817 1N5818 1N5819 Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mounting conditions. PARAMETER thermal resistance from junction to ambient VR = VRRMmax; note 1 VR = VRRMmax; Tj = 100 °C VR = 4 V; f = 1 MHz CONDITIONS 1N5817; 1N5818; 1N5819 MIN. − − − − − − − − − − − − − − − − − − − − − − − − − TYP. MAX. 320 450 750 330 550 875 340 600 900 1 10 − − − UNIT mV mV mV mV mV mV mV mV mV mA mA pF pF pF 80 50 50 CONDITIONS note 1 VALUE 100 UNIT K/W 1996 May 03 4 Philips Semiconductors Product specification Schottky barrier diodes GRAPHICAL DATA 1N5817; 1N5818; 1N5819 handbook, halfpage 5 MBE634 IF (A) 4 Tj = 125 oC 25 oC 3 2 1 0 0 0.5 VF (V) 1 Fig.2 Typical forward voltage. 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE642 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.3 1N817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 5 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE641 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.4 1N5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE643 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.5 1N5819. Maximum values steady state forward power dissipation as a function of the average forward c...

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