Maker : STMicroelectronics
Part No. : 1N581X

  Datasheet PDF : 1N581X.pdf
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Shortcut : 1N5810  1N5810  1N5811  1N5811  1N5811  1N5811  1N5811U  1N5811US  1N5812  1N5812  1N5812  1N5812  1N5812R  1N5813  1N5813  1N5813  1N5814  1N5814  1N5814  1N5814  1N5814R  1N5815  1N5815  1N5815  1N5815  1N5815R  1N5816  1N5816  1N5816  1N5816  1N5816R  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817  1N5817-T3  1N5817-TB  1N5817G  1N5817L  1N5817M  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818  1N5818-T3  1N5818-TB  1N5818G  1N5818L  1N5818M  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819  1N5819-T3  1N5819-TB  1N5819G  1N5819HW  1N5819L  1N5819M  1N5819U  1N5819UR  1N581X 

Product Information

® 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS n n n n n 1A 40 V 150°C 0.45 V VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DO41 DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 125°C δ = 0.5 tp = 10 ms Sinusoidal tp = 1µs Tj = 25°C 1200 Value 1N5817 1N5818 1N5819 20 30 40 10 1 25 1200 - 65 to + 150 150 10000 900 Unit V A A A W °C °C V/µs * : dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/5 July 2003 - Ed: 4A 1N581x THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction to lead Parameter Lead length = 10 mm Lead length = 10 mm Value 100 45 Unit °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Pulse test : * tp = 380 µs, δ < 2% VR = VRRM IF = 1 A IF = 3 A 1N5817 1N5818 1N5819 0.5 0.5 0.5 10 0.45 0.75 10 0.50 0.80 10 0.55 0.85 Unit mA mA V V To evaluate the conduction losses use the following equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 Fig. 1: Average forward power dissipation versus average forward current (1N5817/1N5818). PF(av)(W) 0.6 0.5 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Average forward power dissipation versus average forward current (1N5819). PF(av)(W) 0.7 0.6 0.5 δ = 0.1 δ = 0.05 δ=1 δ = 0.2 δ = 0.5 0.4 0.3 δ=1 0.4 0.3 0.2 T 0.2 0.1 tp T 0.1 IF(av) (A) δ=tp/T 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 tp δ=tp/T IF(av) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 2-1: Average forward current versus ambient temperature (δ=0.5) (1N5817/1N5818). IF(av)(A) 1.2 Rth(j-a)=Rth(j-l)=45°C/W Fig. 2-2: Average forward current versus ambient temperature (δ=0.5) (1N5819). IF(av)(A) Rth(j-a)=Rth(j-l)=45°C/W 1.2 1.0 Rth(j-a)=100°C/W 1.0 0.8 0.6 0.4 T 0.8 0.6 0.4 T Rth(j-a)=100°C/W 0.2 δ=tp/T tp 0.2 Tamb(°C) 50 75 100 125 150 δ=tp/T tp Tamb(°C) 50 75 100 125 150 0.0 0 25 0.0 0 25 2/5 1N581x Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1µs) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25°C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(µs) 0 10 100 1000 Tj(°C) 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5817/1N5818). 10 9 8 7 6 5 4 3 2 1 0 1E-3 IM t Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5819). 8 7 6 IM(A) IM(A) Ta=25°C Ta=75°C 5 4 3 Ta=25°C Ta=75°C Ta=100°C 2 IM Ta=100°C δ=0.5 t(s) 1E-2 1E-1 1E+0 1 0 1E-3 t δ=0.5 t(s) 1E-2 1E-1 1E+0 Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout). 1.0 0.8 0.6 0.4 δ = 0.2 Fig. 7: Junction capacitance versus reverse voltage applied (typical values). Zth(j-a)/Rth(j-a) C(pF) 500 F=1MHz Tj=25°C 200 1N5817 δ = 0.5 100 1N5818 50 T δ = 0.1 Single pulse 1N5819 0.2 20 tp(s) 1E+1 δ=tp/T tp VR(V) 10 1 2 5 10 20 40 0.0 1E-1 1E+0 1E+2...

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