Maker : Fairchild Semiconductor
Part No. : 2010DN

  Datasheet PDF : 2010DN.pdf
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Product Information

www.DataSheet4U.com FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted ° Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 20 150 -65 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 1.7 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.77 0.65 0.75 mA 0.1 20 Units V IRM * * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 www.DataSheet4U.com FYP2010DN Typical Characteristics 100 10 Forward Current, I F[A] 10 Reverse Current, IR[mA] 1 T J=125 C o 1 0.1 TJ=75 C o TJ=125 C 0.1 o TJ=75 C TJ=25 C o o 0.01 T J=25 C o 0.01 0.0 1E-3 0.5 1.0 1.5 20 40 60 80 100 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Figure 1. Typical Forward Voltage Characteristics (per diode) Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode) 10 1000 900 800 700 600 500 400 300 200 TJ=25 C o Transient Thermal Impedance [ C/W] Juntion Capacitance, C J[pF] o 1 100 90 80 0 20 40 60 80 100 100µ 1m 10m 100m 1 10 Reverse Voltage, VR[V] Pulse Duration [s] Figure 3. Typical Junction Capacitance (per diode) Figure 4. Thermal Impedance Characteristics (per diode) 25 250 Average Forward Current, IF(AV)[A] DC 20 Max. Forward Surge Current, I FSM[A] 80 100 o 200 15 150 10 100 5 50 0 0 20 40 60 120 140 160 0 1 10 100 Case Temperature, T C [ C] Number of Cycles @ 60Hz Figure 5. Forward Current Derating Curve Figure 6. Non-Repetive Surge Current (per diode) ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 www.DataSheet4U.com FYP2010DN Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 www.DataSheet4U.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DES...

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