Maker : Seme LAB
Part No. : 2N2369ACSM

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Product Information

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2369ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.31 rad. (0.012) 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) 3 • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS A 1.40 (0.055) max. 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) 0.76 ± 0.15 (0.03 ± 0.006) 1.02 ± 0.10 (0.04 ± 0.004) APPLICATIONS: Hermetically sealed surface mount version of the popular 2N2369A for high reliability / space applications requiring small size and low weight devices. SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°C Derate above 25°C Operating and Storage Temperature Range 40V 15V 4.5V 200mA 360mW 2.06mW / °C 680mW 6.85mW / °C –65 to +200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO* V(BR)CBO V(BR)EBO ICES Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Emitter Cut-off Current SEME 2N2369ACSM Test Conditions IC = 10mA IE = 10mA VCE = 20V VCE = 10V TA = +150°C VCB = 20V TA = +125°C VEB = 4V IC = 10mA IB = 1mA TA = +150°C IC = 30mA IC = 100mA IC = 10mA IB = 1mA IB = 3mA IB = 10mA TA = +25°C TA = +150°C TA = –55°C IC = 30mA IC = 100mA IC = 10mA IC = 30mA IB = 3mA IB = 10mA VCE = 0.35V VCE = 0.40V VCE = 1V TA = –55°C IC = 100mA VCE = 1V VCE = 10V IE = 0 IC = 0 IC = 10mA f = 100MHz VCB = 5V VEB = 0.5V IC = 10mA IB1 = –IB2 = 10mA IC = 10mA IB1 = 3mA IB2 = –1.5mA f = 100kHz to 1MHz f = 100kHz to 1MHz Min. 15 40 4.5 Typ. Max. Unit V V V 0.40 0.30 30 0.20 30 0.25 0.20 0.30 0.25 0.43 V mA mA mA Collector – Emitter Breakdown Voltage IC = 10mA ICBO IEBO Collector – Base Cut-off Current Emitter – Base Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage 0.70 0.59 0.85 1.02 0.90 1.20 V VBE(sat) Base – Emitter Saturation Voltage 40 30 40 20 20 5 120 120 120 120 10 4 pF 5 13 12 18 ns ns — — hFE* Current Gain IC = 10mA |hfe| Cob Cib ts ton toff Magnitude of hfe Output Capacitance Input Capacitance Storage Time Turn–On Time Turn–Off Time * Pulse Test: tp £ 300ms, d £ 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 ...

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