Maker : Motorola
Part No. : 2N2369

  Datasheet PDF : 2N2369.pdf
  Cross Reference : 2N2369 Cross Reference
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Shortcut : 2N2364  2N2368  2N2368  2N2369  2N2369  2N2369  2N2369  2N2369  2N2369A  2N2369A  2N2369A  2N2369A  2N2369A  2N2369A1  2N2369ACSM  2N2369ADCSM  2N2369AU  2N2369AUA  2N2369AUB 

Product Information

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A* *Motorola Preferred Device 3 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector– Base Voltage Emitter– Base Voltage Collector Current (10 ms pulse) Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC(Peak) IC PD PD TJ, Tstg Value 15 40 40 4.5 500 200 0.36 2.06 0.68 6.85 – 65 to +200 Unit Vdc Vdc Vdc Vdc mA mA Watt mW/°C Watts mW/°C °C 1 CASE 22–03, STYLE 1 TO–18 (TO–206AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 486 147 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) Base Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width 2N2369 2N2369A ICES 2N2369A IB 2N2369A — 0.4 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICBO — — — 0.4 30 0.4 40 15 40 4.5 — — — — Vdc Vdc Vdc Vdc mAdc mAdc mAdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) hFE 2N2369 2N2369A 2N2369 2N2369A 2N2369A 2N2369A 2N2369 VCE(sat) 2N2369 2N2369A 2N2369A 2N2369A 2N2369A VBE(sat) All Types 2N2369A 2N2369A 2N2369A 2N2369A 0.70 0.59 — — — 0.85 — 1.02 1.15 1.60 — — — — — 0.25 0.20 0.30 0.25 0.50 Vdc 40 — 20 20 30 20 20 120 120 — — — — — Vdc — (IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55°C) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 500 — — — 4.0 4.0 MHz pF pF SWITCHING CHARACTERISTICS Storage Time (IC = IB1 = 10 mAdc, IB2 = –10 mAdc) Turn–On Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc) Turn–Off Time (IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc) 1. Pulse Test: Pulse Width ts ton toff — — — 13 12 18 ns ns ns v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N2369 2N2369A SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227 +10.6 V 0 –1.5 V t1 3V 270 Ω +10.75 V 0 –9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% t1 270 Ω < 1 ns 3.3 k Cs* < 4 pF 3.3 k Cs* < 4 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 1. ton Circuit — 10 mA Figure 3. toff Circuit — 10 mA +10.8 V –2 V 0...

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