Maker : Philips
Part No. : 2N2369

  Datasheet PDF : 2N2369.pdf
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification. handbook, halfpage 1 2N2369 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION NPN switching transistor in a TO-18 metal package. 3 2 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 10 mA; VCE = 1 V; Tj = 25 °C IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA open emitter open base CONDITIONS − − − − 40 500 − MIN. MAX. 40 15 200 360 120 − 30 MHz ns V V mA mW UNIT 1997 Jun 20 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C tp = 10 ms CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. 2N2369 MAX. 40 15 5 200 300 100 360 +150 200 +150 V V V UNIT mA mA mA mW °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 480 145 UNIT K/W K/W 1997 Jun 20 3 Philips Semiconductors Product specification NPN switching transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 125 °C IC = 0; VEB = 4 V IC = 10 mA; VCE = 1 V; note 1 IC = 10 mA; VCE = 1 V; Tj = −55 °C; note 1 IC = 100 mA; VCE = 2 V; note 1 VCEsat VBEsat Cc fT ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC = 10 mA; IB = 1 mA IC = 10 mA; IB = 1 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA MIN. − − − 40 20 20 − 700 − 500 − − − − − − 2N2369 MAX. 400 30 100 120 − − 250 850 4 − UNIT nA µA nA mV mV pF MHz Switching times (between 10% and 90% levels); see Fig.2 turn-on time delay time rise time turn-off time storage time fall time 10 4 6 30 15 15 ns ns ns ns ns ns handbook, full pagewidth VBB VCC RB oscilloscope Vi R1 (probe) 450 Ω R2 RC Vo (probe) 450 Ω DUT oscilloscope MLB826 Vi = 0.5 V to 4.2 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω. VBB = 0.2 V; VCC = 2.7 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Jun 20 4 Philips Semiconductors Product specification NPN switching transistor PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads 2N2369 SOT18/13 j B α seating plane w M A M B M 1 k D1 b 2 3 a A D A L 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.31 4.74 a 2.54 b 0.47 0.41 D 5.45 5.30 D1 4.70 4.55 j 1.03 0.94 k 1.1 0.9 L 15.0 12.7 w 0.40 α 45° OUTLINE VERSION SOT18/13 REFERENCES IEC B11/C7 type 3 JEDEC TO-18 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 1997 Jun 20 5 Phi...

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