Maker : Hitachi Semiconductor
Part No. : 2SB1390

  Datasheet PDF : 2SB1390.pdf
  Cross Reference : 2SB1390 Cross Reference
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Product Information

2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 4 kΩ (Typ) ID 200 Ω (Typ) 3 12 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID* 1 1 Ratings –60 –60 –7 –8 –12 2 25 150 –55 to +150 8 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –60 –60 –7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 V V V Unit V V V µA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –50 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I D = 8 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD See switching characteristic curve of 2SB1103. 2 2SB1390 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) –30 iC(peak) Collector current IC (A) –10 IC(max) –3 –1.0 –0.3 –0.1 Ta = 25°C 1 Shot Pulse 20 Area of Safe Operation 1 µs ) µs 5°C 100 s =2 s 1m n(T C 0m = 1 eratio Op DC PW 10 0 50 100 Case temperature TC (°C) 150 –0.03 –0.3 –1.0 –3 –10 –30 –100 –300 Collector to emitter voltage VCE (V) Typical Output Characteristics –10 –5 DC Current Transfer Ratio vs. Collector Current 10000 VCE = –3 V DC current transfer ratio hFE 5000 TC = 25°C –4.5 –4 –3 Collector current IC (A) –8 .5 –3 –2.5 –2 TC =7 5° C 25 °C –1.5 –6 P 2000 1000 500 °C –25 C =2 –1.0 –4 5W IB = –0.5 mA –2 IB = 0 0 –3 –4 –5 –1 –2 Collector to emitter voltage VCE (V) 200 100 –0.1 –0.2 –5 –0.5 –1.0 –2 Collector current IC (A) –10 3 2SB1390 Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) –10 –5 TC = 25°C 200 –2 –1.0 –0.5 VCE(sat) VBE(sat) 500 IC/IB = 200 –0.2 –0.1 –0.2 –0.5 –1.0 –2 –5 Collector current IC (A) –10 Transient Thermal Resistance 10 Thermal resistance θj-c (°C/W) 3 TC = 25°C 1.0 0.3 0.1 1m 10 m 100 m 1.0 Time t (s) 10 100 1000 4 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales offi...

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