Maker : Hitachi Semiconductor
Part No. : 2SB1392

  Datasheet PDF : 2SB1392.pdf
  Cross Reference : 2SB1392 Cross Reference
  Buy Component : 2SB1392 Find Stock and Price

Shortcut : 2SB1390  2SB1390  2SB1391  2SB1391  2SB1392  2SB1392  2SB1393  2SB1393  2SB1393A  2SB1393A  2SB1394  2SB1395  2SB1396  2SB1397  2SB1398  2SB1399 

Product Information

2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –70 –60 –5 –4 –8 2 25 150 –55 to +150 Unit V V V A A W °C °C 2SB1392 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –70 –60 –5 — — 2 Typ — — — — — — — — — — Max — — — –10 –10 200 — –1.0 –1.0 –1.2 Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –4 V, IC = –1 A*1 VCE = –4 V, IC = –0.1 A*1 VCE = –4 V, IC = –1 A*1 I C = –2.0 A, IB = –0.2 A*1 I C = –2.0 A, IB = –0.2 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage VBE VCE(sat) VBE(sat) 60 35 — — — V V V Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –10 –5 Collector Current IC (A) 20 iC (peak) Area of Safe Operation 1m –2 IC (max) –1.0 –0.5 –0.2 –0.1 –0.05 –0.02 DC PW s s 0m =1 10 Ta = 25°C 1 Shot pulse rati Ope on (T C =2 ) 5°C 0 50 100 Case Temperature TC (°C) 150 –0.01 –3 –10 –30 –100 –300 Collector to emitter Voltage VCE (V) 2 2SB1392 Typical Output Characteristics –10 0 DC Current Transfer Ratio vs. Collector Current 1,000 –5 –8 0 –70 –60 Collector Current IC (A) –4 –40 –30 DC current transfer ratio hFE –50 300 –25°C TC = 75°C –3 –20 25°C 100 –2 –10 mA –1 IB = 0 0 30 VCE = –4 V TC = 25°C –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) 10 –0.1 –0.3 –1.0 –3 Collector current IC (A) –10 Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) –1.0 lC/lB = 10 –0.3 –25°C –0.1 25°C –0.03 TC = 25°C –0.01 –0.1 –0.3 –1.0 –3 Collector current IC (A) –10 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 3 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuc...

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