Maker : SavantIC
Part No. : 2SB1392

  Datasheet PDF : 2SB1392.pdf
  Cross Reference : 2SB1392 Cross Reference
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Product Information

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1392 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -5 -4 -8 2.0 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA;RBE=< IC=-10µA; IE=0 IE=-10µA; IC=0 IC=-2A ;IB=-0.2A IC=-2A; IB=-0.2A IC=-1A ; VCE=-4V VCB=-50V; IE=0 VCE=-50V; RBE=< IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V 60 35 MIN -60 -70 -5 2SB1392 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat VBE ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V V -1.0 -1.2 -1.0 -10 -10 200 V V V µA µA hFE-1 classifications B 60-120 C 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1392 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 ...

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