Maker : Panasonic Semiconductor
Part No. : 2SB1393

  Datasheet PDF : 2SB1393.pdf
  Cross Reference : 2SB1393 Cross Reference
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Shortcut : 2SB1390  2SB1390  2SB1391  2SB1391  2SB1392  2SB1392  2SB1393  2SB1393  2SB1393A  2SB1393A  2SB1394  2SB1395  2SB1396  2SB1397  2SB1398  2SB1399 

Product Information

Power Transistors 2SB1393, 2SB1393A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 7.5±0.2 Solder Dip 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1393 2SB1393A 2SB1393 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 25 2.0 150 –55 to +150 Unit V emitter voltage 2SB1393A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.3 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1393 2SB1393A 2SB1393 2SB1393A 2SB1393 2SB1393A (TC=25˚C) Symbol ICEO ICES IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = –30V, IB = 0 VCE = –60V, IB = 0 VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –5V, IC = – 0.1A, f = 1MHz IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V 20 0.5 1.2 0.3 –60 –80 70 10 –1.8 –1.2 V V MHz µs µs µs 250 min typ max –300 –300 –200 –200 –1 Unit µA µA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 40 –6 VCE=–4V (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SB1393, 2SB1393A IC — VBE Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 VCE(sat) — IC Collector power dissipation PC (W) –5 30 Collector current IC (A) TC=100˚C –4 20 (1) –3 –2 25˚C –1 –25˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C 25˚C 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 –25˚C 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –1 –3 –10 Ambient temperature Ta (˚C) Base to emitter voltage VBE (V) Collector current IC (A) hFE — IC 10000 VCE=–4V 1000 fT — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=–5V f=1MHz TC=25˚C IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 3000 Transition frequency fT (MHz) 300 3000 1000 100 1000 300 TC=125˚C 25˚C 30 300 100 –25˚C 30 10 100 3 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 10 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) –10 ICP t=1ms –3 IC 10ms Non repetitive pulse TC=25˚C 10000 Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink –1 – 0.3 – 0.1 – 0.03 – 0.01 DC Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 1000 100 (1) 10 (2) – 0.003 – 0.001 –1 2SB1393A 2SB1393 1 –3 –10 –30 –100 –300 –1000 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 ...

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