Maker : Panasonic Semiconductor
Part No. : 2SB1398

Datasheet PDF : 2SB1398.pdf
Cross Reference : 2SB1398 Cross Reference
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Product Information

Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 q q q Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –30 –25 –7 –8 –5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 0.45–0.05 +0.1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 1 2 3 0.45–0.05 +0.1 2.5±0.5 2.5±0.5 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.2±0.1 0.65 max. 0.45+0.1 – 0.05 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz *2 min typ max –100 –100 –25 –7 90 205 –1 120 85 14.5±0.5 0.5 4.5±0.1 s Features Unit nA nA V V V MHz pF Pulse measurement *1h FE Rank classification P 90 ~ 135 Q 120 ~ 205 Rank hFE 1 Transistor PC — Ta 1.6 –6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –5 IB=–50mA –9 –45mA 2SB1398 IC — VCE –10 VCE=–2V IC — VBE Collector power dissipation PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Collector current IC (A) Collector current IC (A) –40mA –35mA –30mA –25mA –8 –7 Ta=100˚C –6 –5 –4 –3 –2 –1 25˚C –25˚C –4 –3 –20mA –15mA –2 –10mA –5mA –1 0 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 –6 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) hFE — IC Collector to emitter saturation voltage VCE(sat) (V) 500 VCE=–2V –100 –30 –10 –3 –1 450 400 350 300 250 200 150 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 Ta=100˚C 25˚C –25˚C VCE(sat) — IC IC/IB=30 240 fT — I E VCB=–6V Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –10 200 160 Ta=100˚C 25˚C –25˚C 120 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 80 40 0 –1 –3 1 3 10 30 100 300 1000 –1 –3 –10 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 240 Collector output capacitance Cob (pF) 200 IE=0 f=1MHz Ta=25˚C 160 120 80 40 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 ...

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