Maker : Panasonic Semiconductor
Part No. : 2SD1271

  Datasheet PDF : 2SD1271.pdf
  Cross Reference : 2SD1271 Cross Reference
  Buy Component : 2SD1271 Find Stock and Price

Shortcut : 2SD1270  2SD1270  2SD1270  2SD1270  2SD1271  2SD1271  2SD1271  2SD1271A  2SD1271A  2SD1272  2SD1273  2SD1273  2SD1273A  2SD1274  2SD1274  2SD1274A  2SD1274A  2SD1274B  2SD1274B  2SD1275  2SD1275  2SD1275  2SD1275A  2SD1275A  2SD1275A  2SD1276  2SD1276  2SD1276  2SD1276A  2SD1276A  2SD1276A  2SD1277  2SD1277  2SD1277  2SD1277  2SD1277A  2SD1277A  2SD1277A  2SD1279  2SD1279 

Product Information

Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1271 2SD1271A 2SD1271 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 16.7±0.3 14.0±0.5 Ratings 130 150 80 100 7 15 7 40 2 150 –55 to +150 Unit V emitter voltage 2SD1271A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1271 2SD1271A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 2SD1271, 2SD1271A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC (1) IC/IB=10 (2) IC/IB=20 TC=25˚C Collector power dissipation PC (W) Collector current IC (A) 40 (1) 8 IB=55mA 6 50mA 45mA 40mA 35mA 30mA 20mA 15mA 2 10mA 5mA 0 3 30 1 (2) (1) 0.3 20 4 0.1 10 (2) (3) (4) 0.03 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 10 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 100 IC/IB=20 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C IC/IB=20 30 10 3 1 TC=100˚C 0.3 0.1 –25˚C 0.03 0.01 0.01 0.03 25˚C 3 (1) (2) 1 0.3 0.1 0.03 0.1 0.3 1 3 10 0.01 0.1 0.3 1 3 10 30 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE — IC 10000 VCE=2V 10000 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=10V f=10MHz TC=25˚C IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 1000 300 Transition frequency fT (MHz) 3000 3000 1000 300 100 30 10 3 1 0.1 TC=100˚C 25˚C 100 –25˚C 30 10 3 1 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 Power Transistors ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 2SD1271, 2SD1271A Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25˚C Switching time ton,tstg,tf (µs) 10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 Collector current IC (A) 10 IC 3 1 0.3 0.1 0.03 0.01 t=0.5ms 10ms 1ms DC tstg ton tf 5 6 7 8 1 3 10 30 100 2SD1271A 300 2SD1271 1000 Collector current IC (A) Collector to emitt...

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