Maker : Panasonic Semiconductor
Part No. : 2SD1272

  Datasheet PDF : 2SD1272.pdf
  Cross Reference : 2SD1272 Cross Reference
  Buy Component : 2SD1272 Find Stock and Price

Shortcut : 2SD1270  2SD1270  2SD1270  2SD1270  2SD1271  2SD1271  2SD1271  2SD1271A  2SD1271A  2SD1272  2SD1273  2SD1273  2SD1273A  2SD1274  2SD1274  2SD1274A  2SD1274A  2SD1274B  2SD1274B  2SD1275  2SD1275  2SD1275  2SD1275A  2SD1275A  2SD1275A  2SD1276  2SD1276  2SD1276  2SD1276A  2SD1276A  2SD1276A  2SD1277  2SD1277  2SD1277  2SD1277  2SD1277A  2SD1277A  2SD1277A  2SD1279  2SD1279 

Product Information

Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 6 2.5 1 0.1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 4.0 1.4±0.1 1.3±0.2 Solder Dip 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (TC=25˚C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = 200V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.2A IC = 0.5A, IB = 0.02A VCE = 4V, IC = 0.1A, f = 10MHz 25 150 500 2000 1 V MHz min typ max 100 100 Unit µA µA V *h FE Rank classification Q P Rank hFE 500 to 1200 800 to 2000 1 Power Transistors PC — Ta 50 0.5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C IB=400µA 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 2SD1272 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC IC/IB=25 Collector power dissipation PC (W) Collector current IC (A) 40 (1) 0.4 3 TC=100˚C 30 1 0.3 25˚C 20 –25˚C 0.1 10 (2) (3) (4) 0.03 0 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 IC/IB=25 fT — IC VCE=4V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 3 25˚C 1 TC=100˚C 1000 300 100 30 10 3 TC=100˚C 25˚C –25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 1 0.01 0.03 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 102 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 ICP IC 10ms t=1ms 10 (2) 1 DC 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 ...

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