Maker : Panasonic Semiconductor
Part No. : 2SD1273

  Datasheet PDF : 2SD1273.pdf
  Cross Reference : 2SD1273 Cross Reference
  Buy Component : 2SD1273 Find Stock and Price

Shortcut : 2SD1270  2SD1270  2SD1270  2SD1270  2SD1271  2SD1271  2SD1271  2SD1271A  2SD1271A  2SD1272  2SD1273  2SD1273  2SD1273A  2SD1274  2SD1274  2SD1274A  2SD1274A  2SD1274B  2SD1274B  2SD1275  2SD1275  2SD1275  2SD1275A  2SD1275A  2SD1275A  2SD1276  2SD1276  2SD1276  2SD1276A  2SD1276A  2SD1276A  2SD1277  2SD1277  2SD1277  2SD1277  2SD1277A  2SD1277A  2SD1277A  2SD1279  2SD1279 

Product Information

Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Complementary to 2SB1299 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 2 150 –55 to +150 Unit V 7.5±0.2 16.7±0.3 φ3.1±0.1 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1273 2SD1273A 2SD1273 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 1.4±0.1 1.3±0.2 Solder Dip 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 emitter voltage 2SD1273A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V A A A W ˚C ˚C 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current 2SD1273 2SD1273A (TC=25˚C) Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 50 60 80 500 2500 1 V MHz min typ max 100 100 100 100 Unit µA µA µA V Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1273 2SD1273A VCEO hFE* VCE(sat) fT Forward current transfer ratio Collector to emitter saturation voltage Transition frequency *h FE Rank classification Q P O hFE 500 to 1000 800 to 1500 1200 to 2500 Rank Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. 1 Power Transistors PC — Ta 50 1.0 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=1.2mA 1.0mA TC=25˚C 2SD1273, 2SD1273A IC — VCE 5 IC — VBE Collector power dissipation PC (W) Collector current IC (A) 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 0.1mA 0 Collector current IC (A) 40 (1) 0.8 4 TC=100˚C 3 30 25˚C 2 –25˚C 1 20 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=40 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 25˚C –25˚C 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=12V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 –25˚C 25˚C 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 TC=100˚C 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 10ms DC t=1ms 10 (2) 1 2SD1273A 2SD1273 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 ...

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