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Silicon NPN triple diffusion planar type(For power amplification)Maker : Panasonic Semiconductor
Shortcut : 2SD1270 2SD1270 2SD1270 2SD1270 2SD1271 2SD1271 2SD1271 2SD1271A 2SD1271A 2SD1272 2SD1273 2SD1273 2SD1273A 2SD1274 2SD1274 2SD1274A 2SD1274A 2SD1274B 2SD1274B 2SD1275 2SD1275 2SD1275 2SD1275A 2SD1275A 2SD1275A 2SD1276 2SD1276 2SD1276 2SD1276A 2SD1276A 2SD1276A 2SD1277 2SD1277 2SD1277 2SD1277 2SD1277A 2SD1277A 2SD1277A 2SD1279 2SD1279 |
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Product Information |
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Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit: mm 0.7±0.1 s Features q q q 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage 2SD1274 2SD1274A 2SD1274B 2SD1274 2SD1274A 2SD1274B VCEO VEBO IC PC Tj Tstg VCES VCBO Symbol (TC=25˚C) Ratings 150 200 250 2.54±0.25 16.7±0.3 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 Unit 14.0±0.5 Solder Dip 4.0 1.3±0.2 0.5 +0.2 –0.1 0.8±0.1 V Collector to emitter voltage 150 200 250 80 6 5 40 2 150 –55 to +150 V V A W ˚C ˚C V 5.08±0.5 1 2 3 Collector to emitter voltage Emitter to base voltage Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current 2SD1274 2SD1274A 2SD1274B (TC=25˚C) Symbol Conditions VCB = 150V, IE = 0 ICBO VCEO(sus)* VEBO hFE VBE VCE(sat) fT tf VCB = 200V, IE = 0 VCB = 250V, IE = 0 IC = 0.2A, L = 25mH IE = 1mA, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 5A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.8A, VEB = –5V X L 25mH Y 1Ω 15V G 80 IC(A) 0.2 0.1 VCE(V) min typ max 1 1 1 Unit mA Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Fall time *V CEO(sus) 80 6 14 1.5 1.6 40 1 V V V V MHz µs Test circuit 60Hz 120Ω 6V 1 Power Transistors PC — Ta 50 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 2SD1274, 2SD1274A, 2SD1274B IC — VCE 8 TC=25˚C 5 IB=45mA 7 25˚C VCE=4V IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 40 (1) 40mA 35mA 4 30mA 25mA 3 20mA 2 15mA 10mA 1 5mA 0 6 5 4 3 2 1 0 TC=100˚C –25˚C 30 20 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 TC=100˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C 10000 hFE — IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC VCE=10V f=10MHz TC=25˚C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100˚C 25˚C –25˚C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25˚C 30 Non repetitive pulse TC=25˚C Area of safe operation, horizontal operation ASO 20 18 f=15.75kHz, TC=25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 1 3 10 30 100 Collector current IC (A) 10 ICP 3 1 0.3 0.1 0.03 0.01 IC DC t=1ms Collector current IC (A) 16 14 12 10 8 6 4 2 <1mA 0 1 3 10 30 100 300 1000 0 80 160 240 320 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) — t 103 2SD1274, 2SD1274A, 2SD1274B (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) 102 (1) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 ... |
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