Maker : Panasonic Semiconductor
Part No. : 2SD1275

  Datasheet PDF : 2SD1275.pdf
  Cross Reference : 2SD1275 Cross Reference
  Buy Component : 2SD1275 Find Stock and Price

Shortcut : 2SD1270  2SD1270  2SD1270  2SD1270  2SD1271  2SD1271  2SD1271  2SD1271A  2SD1271A  2SD1272  2SD1273  2SD1273  2SD1273A  2SD1274  2SD1274  2SD1274A  2SD1274A  2SD1274B  2SD1274B  2SD1275  2SD1275  2SD1275  2SD1275A  2SD1275A  2SD1275A  2SD1276  2SD1276  2SD1276  2SD1276A  2SD1276A  2SD1276A  2SD1277  2SD1277  2SD1277  2SD1277  2SD1277A  2SD1277A  2SD1277A  2SD1279  2SD1279 

Product Information

Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For power amplification Complementary to 2SB949 and 2SB949A Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 5 4 2 35 2 150 –55 to +150 Unit V 7.5±0.2 s Features φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1275 2SD1275A 2SD1275 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.5 –0.1 0.8±0.1 +0.2 2.54±0.25 5.08±0.5 emitter voltage 2SD1275A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1275 2SD1275A 2SD1275 2SD1275A 2SD1275 2SD1275A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8mA, VCC = 50V min typ max 1 1 2 2 2 Unit mA mA mA V 60 80 1000 2000 10000 2.8 2.5 20 0.5 4 1 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 V V MHz µs µs µs Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors PC — Ta 50 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 2SD1275, 2SD1275A IC — VCE 10 VCE=4V IC — VBE Collector power dissipation PC (W) Collector current IC (A) (1) 30 Collector current IC (A) 40 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA 8 25˚C TC=100˚C 6 –25˚C 3 20 2 4 10 (2) (3) (4) 1 2 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C 105 hFE — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=4V IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 0.1 104 TC=100˚C 103 25˚C –25˚C 102 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 DC 1ms t=10ms 10 (2) 1 2SD1275A 2SD1275 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 ...

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