Maker : Panasonic Semiconductor
Part No. : 2SD1277

  Datasheet PDF : 2SD1277.pdf
  Cross Reference : 2SD1277 Cross Reference
  Buy Component : 2SD1277 Find Stock and Price

Shortcut : 2SD1270  2SD1270  2SD1270  2SD1270  2SD1271  2SD1271  2SD1271  2SD1271A  2SD1271A  2SD1272  2SD1273  2SD1273  2SD1273A  2SD1274  2SD1274  2SD1274A  2SD1274A  2SD1274B  2SD1274B  2SD1275  2SD1275  2SD1275  2SD1275A  2SD1275A  2SD1275A  2SD1276  2SD1276  2SD1276  2SD1276A  2SD1276A  2SD1276A  2SD1277  2SD1277  2SD1277  2SD1277  2SD1277A  2SD1277A  2SD1277A  2SD1279  2SD1279 

Product Information

Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For midium speed power switching Complementary to 2SB951 and 2SB951A Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 4.2±0.2 q q 16.7±0.3 14.0±0.5 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150 –55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 Collector to base voltage Collector to Solder Dip 4.0 7.5±0.2 s Features emitter voltage 2SD1277A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1277 2SD1277A 2SD1277 2SD1277A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VEB = 7V, IC = 0 IC = 30mA, IB = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA IC = 4A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 20 0.5 4 1 60 80 2000 500 1.5 2 V V MHz µs µs µs 10000 min typ max 100 100 2 Unit µA mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE1 1 Power Transistors PC — Ta 50 12 (1) 40 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 10 2SD1277, 2SD1277A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) Collector power dissipation PC (W) Collector current IC (A) 3 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA 2 30 1 6 0.3 20 4 0.1 10 (2) (3) (4) 0.03 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 0.01 0.1 0.3 1 3 10 30 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=500 TC=100˚C 3 25˚C –25˚C VCB(sat) — IC 100000 hFE — IC IC/IB=500 VCE=3V Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 30000 TC=100˚C 25˚C –25˚C 3 TC=–25˚C 1 100˚C 25˚C 10000 1 3000 1000 300 100 30 10 0.1 0.3 0.3 0.1 0.1 0.03 0.03 0.01 0.1 0.3 1 3 10 30 0.01 0.1 0.3 1 3 10 30 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25˚C ICP 10 IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 DC 1ms t=10ms Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 (1) 10 (2) 1 2SD1277A 2SD1277 10–1 100 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 ...

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