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TinyFET P-Channel MOSFET Preliminary InformationMaker : Micrel Semiconductor
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Product Information |
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MIC94030/94031 Micrel MIC94030/94031 TinyFET™ P-Channel MOSFET Preliminary Information General Description The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage. The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications. The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the θJA (improved heat dissipation) and makes analog switch applications practical. The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications. Features • 13.5V minimum drain-to-source breakdown • 0.75Ω typical on-resistance at 4.5V gate-to-source voltage • 0.45Ω typical on-resistance at 10V gate-to-source voltage • Operates with 2.7V gate-to-source voltage • Separate substrate connection for added control • Industry’s smallest surface mount package Applications • • • • • Distributed power management PCMCIA card power management Battery-powered computers, peripherals Hand-held bar-code scanners Portable communications equipment Ordering Information Part Number MIC94030BM4 MIC94031BM4 Temperature Range* –55°C to +150°C –55°C to +150°C Package SOT-143 SOT-143 * Operating Junction Temperature Pin Configuration Typical PCB Layout D 6 PCB heat sink plane improves heat dissipation SS Drain Substrate Part Identification Part Number Identification P30 P31 P3x Gate Source MIC94030BM4 MIC94031BM4 SOT-143 Package (M4) G S PCB traces Schematic Symbol Functional Diagrams S S Source Gate Substrate Drain D G SS ~500kΩ G Internal gate-to-source pull-up resistor SS D Schematic Symbol Patents 5,355,008; 5,589,702 MIC94030 MIC94031 1997 6-41 MIC94030/94031 Micrel Absolute Maximum Ratings Voltage and current values are negative. Signs not shown for clarity. Drain-to-Source Voltage (pulse) .................................... 16V Gate-to-Source Voltage (pulse) .................................... 16V Continuous Drain Current TA = 25°C .................................................................... 1A TA = 100°C ............................................................... 0.5A Operating Junction Temperature ............... –55°C to +150° Storage Temperature ............................... –55°C to +150°C Total Power Dissipation TA = 25°C ............................................................ 568mW TA = 100°C .......................................................... 227mW Thermal Resistance θJA ...................................................................................... 220°C/W θJC ..................................................................................... 130°C/W Lead Temperature 1/16" from case, 10s ........................................... +300°C Electrical Characteristics Voltage and current values are negative. Symbol VBDSS VGS IGSS RGS CISS IDSS ID(ON) RDS(ON) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate-Source Resistor Input Capacitance Zero Gate Voltage Drain Current Condition (Note 1) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA Signs not shown for clarity. Min 13.5 0.6 1.0 1.4 1 500 750 100 25 0.010 6.3 0.45 0.75 1.20 480 1.00 250 1000 Typ Max Units V V µA kΩ pF µA µA A Ω Ω Ω mS VDS = 0V, VGS = 12V, Note 2, Note 3 VDS = 0V, VGS = 12V, Note 2, Note 4 VGS = 0V, VDS = 12V VDS = 12V, VGS = 0V VDS = 12V, VGS = 0V, TJ = 125°C VDS = 10V, VGS = 10V, Note 5 VGS = 10V, ID = 100mA VGS = 4.5V, ID ... |
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