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START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 (SC70) ORDER CODE START405TR BRANDING 405 DESCRIPTION The START405 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performance level only archived with GaAs products before. APPLICATIONS • LNA FOR GSM/DCS, DECT, PCS, PCN, CDMA, W-CDMA • GENERAL PURPOSE 500MHz-5GHz ABSOLUTE MAXIMUM RATINGS Symbol Vceo Vcbo Vebo Ic Ib Ptot Tstg Tj Collector emitter voltage Collector base voltage Emitter base voltage Collector current Base current Total dissipation, Ts = TBD Storage temperature Max. operating junction temperature Parameter Value 4.5 15 1.5 10 1 45 -65 to 150 150 Unit V V V mA mA mW o o C C ABSOLUTE MAXIMUM RATINGS Rthjs Thermal Resistance Junction soldering point 270 o C/W July, 3 2002 1/7 START405 ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) Symbol Icbo Iebo Hfe NFmin Ga |S21|2 Gms (1) Parameter Collector cutoff current Emitter-base cutoff current DC current gain Minimim noise figure NFmin associated gain Insertion power gain Maximum stable gain 1dB compression point Ouput third order intercept point Test Conditions Vcb =5V, Ie = 0A Veb = 1.5V, Ic = 0A Ic = 5mA, Vce = 4V Ic = 2mA, Vce = 2V, f = 1.8GHz Ic = 2mA, Vce = 2V, f = 1.8GHz Ic = 5mA, Vce = 2V, f = 1.8GHz Ic = 5mA, Vce = 2V, f = 1.8GHz Ic = 5mA,Vce = 2V, f = 1.8GHz Ic = 5mA,Vce = 2V, f = 1.8GHz Min. Typ. Max. 150 15 Unit nA µA 160 1.1 19 17.4 24.2 5 15 dB dB dB dB dBm dBm P-1dB OIP3 Note(1): Gms = | S21 / S12 | PINOUT 4 3 PIN CONNECTION Top view 1 2 Pin No. 1 3 2,4 Description BASE COLLECTOR EMITTER SOT343 2/7 START405 SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) TRANSISTOR CHIP DATA Symbol TMEAS IS ISE NR ISC IKF TR XTF RB RC CJE CJC CJS Value 27.0 1.9E-17 1.58E-13 1 7.40E-17 {0.151*((T(oC)+273.15)/ 300.15)^(-1.774)} 7E-10 42 34.07 7.9 111E-15 53E-15 33E-15 Symbol FC EG NF NE BR NC PTF ITF RBM RE VJE VJC VJS Value 0.5 1.12 1 2.711 8.59 1.312 38 0.42 6.1 1.25 1.1 0.69 0.4 Symbol XJBC XTI BF VAF VAR TF VTF MJE MJC MJS IKR XTB Value 0.3 3.57 340 79 2.35 4.1E-12 14.7 0.414 0.266 0.22 2.29E-3 -0.744 PACKAGE EQUIVALENT CIRCUIT C2 C=5 fF B . L4 L=0.6 nH . L3 B’ L=0.35 nH Transistor Chip E’ L1 C’ L5 L=0.3 nH . L6 L=0.6 nH . C L=0.3 nH C1 C=430 fF L2 . . E C3 C=300 fF L=0.15 nH In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343 package are combined in one electrical connection. FOR MORE ACCURACY SIMULATION IN SATURATION REGION : Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version 2001 only). Table A (Spice Parameters extracted in saturation region) RW 2.594 Vjj 0.769 ENP 2.045 VRP {8.67*((TEMPER+273.15)/300.15)^(0.839)} RP 1.00E-6 3/7 START405 COMMON EMITTER S-PARAMETERS ( VCE = 2V, IC = 5mA ) S11∠Φ -5 -23 -38 -41 -53 -58 -61 -64 -64 -67 -78 S21∠Φ 176 174 174 175 177 180 178 172 164 156 146 FREQ (MHz) 0.1 0.5 0.9 1 1.5 1.8 2 2.5 3 3.5 4 IS11I 0.903 0.882 0.825 0.809 0.713 0.674 0.642 0.579 0.523 0.462 0.372 IS21I 12.29 10.96 9.71 9.42 8.11 7.43 6.99 6.01 5.12 4.31 3.48 IS12I 0.007 0.014 0.021 0.022 0.027 0.028 0.028 0.028 0.030 0.039 0.065 S12∠Φ 95 97 98 99 107 114 122 148 175 131 94 IS22I 0.991 0.971 0.918 0.906 0.850 0.829 0.820 0.815 0.815 0.787 0.644 S22∠Φ -2 -11 -19 -20 -24 -27 -28 -30 -31 -35 -41 4/7 START405 TAPE & REEL ... |
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