Maker : Directed Energy
Part No. : 501N04A

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Directed Energy, Inc. An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS www.DataSheet4U.com VDSS ID25 RDS(on) Maximum Ratings 500 500 ±20 ±30 4.5 27 4.5 3.5 >200 80 3.5 -55…+150 150 -55…+150 V V V V A A A mJ V/ns V/ns W W °C °C °C °C g Features SG1 SG2 GATE = = = = 500 V 4.5 A 1.5 Ω 80W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 PDHS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDHS PDAMB TJ TJM Tstg TL Weight Symbol DRAIN Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C SD1 SD2 1.6mm (0.063 in) from case for 10 s 300 2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 500 2 3 4 ±100 25 250 1.5 2.7 4.0 V nA µA µA Ω S Advantages • Optimized for RF and high speed switching at frequencies to >100MHz • Easy to mount—no insulators needed • High power density Directed Energy, Inc. An DE150-501N04A RF Power MOSFET IXYS Company Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 5 600 VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Symbol RG Ciss Coss Crss www.DataSheet4U.com Ω pF pF pF ns ns ns ns 50 5 4 Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd RthJHS VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) 4 4 4 16 2.0 8.0 1.5 40 6.0 20 nC nC nC K/W Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 4.5 27 1.4 900 A A V ns Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions. DEI MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 Directed Energy, Inc. An DE150-501N04A RF Power MOSFET IXYS Company 501N04A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. www.DataSheet4U.com Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: *SYM=POWMOSN .SUBCKT 501N04A 10 20 30 * TERMINALS: D G S * 500 Volt 4.5 Amp 1.5 Ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 9.5 DON 6 2 D1 ROF 5 7 3.5 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 .6N RD 4 1 1.5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=6.0) .MODEL D1 D (I...

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