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| datasheet.co.kr > datasheet > 5082-2900 > Schottky Barrier Diodes for General Purpose Applications |
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Schottky Barrier Diodes for General Purpose ApplicationsMaker : Agilent(Hewlett-Packard)
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Product Information |
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Schottky Barrier Diodes for General Purpose Applications Technical Data 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace. The 5082-2300 Series and 5082-2900 devices are unpassivated Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers. Outline 15 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. 4.32 (.170) 3.81 (.150) CATHODE 25.4 (1.00) MIN. DIMENSIONS IN MILLIMETERS AND (INCHES). Maximum Ratings Junction Operating and Storage Temperature Range 5082-2303, -2900 .................................................................-60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C 5082-2835 ............................................................................ -60°C to +150°C DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temperature 5082-2303, -2900 .............................................................................. 100 mW 1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW 5082-2835 ......................................................................................... 150 mW Peak Inverse Voltage ................................................................................. VBR 2 Package Characteristics Outline 15 Lead Material ........................................................................................ Dumet Lead Finish .............................................................................. 95-5% Tin-Lead Max. Soldering Temperature ................................................ 260°C for 5 sec Min. Lead Strength .................................................................... 4 pounds pull Typical Package Inductance 1N5711, 1N5712: ................................................................................ 2.0 nH 2800 Series: ........................................................................................ 2.0 nH 2300 Series, 2900: .............................................................................. 3.0 nH Typical Package Capacitance 1N5711, 1N5712: ................................................................................ 0.2 pF 2800 Series: ........................................................................................ 0.2 pF 2300 Series, 2900: ............................................................................ 0.07 pF The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. Electrical Specifications at TA = 25°C General Purpose Diodes Min. Breakdown Voltage VBR (V) 70 70 20 20 15 8* IR = 10 µA *IR = 100 µA Max. Forward Voltage VF (mV) 410 410 410 550 410 340 IF = 1 mA VF = 1 V Max. at Forward Current IF (mA) 15 15 35 35 20 10* *VF = 0.45 V Max. Reverse Leakage Current IR (nA) at VR (V) 200 200 100 150 100 100 50 50 15 16 8 1 Max. Capacitance CT (... |
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